发明授权
- 专利标题： Thin film FET doped with diffusion inhibitor
- 专利标题（中）： 掺杂有扩散抑制剂的薄膜FET
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申请号： US922347申请日： 1986-10-23
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公开(公告)号： US4772927A公开(公告)日： 1988-09-20
- 发明人: Ryuichi Saito , Naohiro Momma
- 申请人： Ryuichi Saito , Naohiro Momma
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-235241 19851023; JPX60-287750 19851223
- 主分类号： H01L21/3215
- IPC分类号： H01L21/3215 ; H01L21/336 ; H01L27/092 ; H01L27/11 ; H01L29/04 ; H01L29/167 ; H01L29/786 ; H01L29/78
摘要：
The present invention relates to a semiconductor device including a MOS transistor which is formed with a source region, a drain region and a channel region by the use of polycrystalline silicon, and a method of manufacturing the semiconductor device. Ions of carbon, oxygen or/and nitrogen are introduced into a polycrystalline silicon layer over the whole area thereof, and restrain conductive ions in the source and drain regions from diffusing into the channel region.
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