发明授权
- 专利标题： Method for manufacturing high-breakdown voltage semiconductor device
- 专利标题（中）： 高耐压半导体器件的制造方法
-
申请号： US101026申请日： 1987-09-24
-
公开(公告)号： US4780426A公开(公告)日： 1988-10-25
- 发明人: Yutaka Koshino , Yoshiro Baba , Jiro Ohshima
- 申请人： Yutaka Koshino , Yoshiro Baba , Jiro Ohshima
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX61-238388 19861007
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/22 ; H01L21/225 ; H01L21/331 ; H01L29/06 ; H01L29/10 ; H01L29/73 ; H01L21/385 ; H01L21/425
摘要：
A first silicon oxide film is formed on the major surface of an n-type silicon substrate. A silicon nitride film is formed on the first silicon oxide film. The first silicon oxide film and the silicon nitride film are selectively etched to form an opening. Boron ions are implanted into the silicon substrate using the first silicon oxide film and the silicon nitride film as a mask. A second silicon oxide film is formed on the silicon substrate exposed by the opening. Gallium ions are implanted into the second silicon oxide film using the silicon nitride film as a mask. Boron and gallium ions are simultaneously diffused in the silicon substrate. In this case, a diffusion rate of gallium in the silicon substrate is higher than that of boron in the silicon substrate, and the diffusion rate of gallium in the silicon oxide film is higher than that in the silicon substrate. Therefore, a p-type second layer is formed in the substrate to surround a p.sup.+ -type first layer in a self-aligned manner.
公开/授权文献
- USD431143S Orthopedic positioning pillow 公开/授权日：2000-09-26
信息查询
IPC分类:
