发明授权
- 专利标题: High heat conductive insulated substrate and method of manufacturing the same
- 专利标题(中): 高导热绝缘基板及其制造方法
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申请号: US927211申请日: 1986-11-05
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公开(公告)号: US4783368A公开(公告)日: 1988-11-08
- 发明人: Kenji Yamamoto , Takehisa Nakayama , Yoshihisa Tawada
- 申请人: Kenji Yamamoto , Takehisa Nakayama , Yoshihisa Tawada
- 申请人地址: JPX Osaka
- 专利权人: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha
- 当前专利权人: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha
- 当前专利权人地址: JPX Osaka
- 优先权: JPX60-249534 19851106; JPX60-295434 19851226; JPX61-11647 19860122; JPX61-75310 19860331; JPX61-79875 19860407
- 主分类号: H01L21/48
- IPC分类号: H01L21/48 ; H01L23/14 ; H01L23/373 ; H05K1/05 ; B32B9/04 ; B32B7/00
摘要:
An insulated substrate having high thermal conductivity comprising a substrate having a thermal conductivity of not less than 50 W/m.k., and an insulating layer having high thermal conductivity coated on the substrate; and a method of producing the insulated substrate characterized in that an insulating layer is formed on a substrate by applying DC voltage and RF power to the substrate and providing a magnetic field parallel to the surface of the substrate.The insulated substrate has good heat conductivity, thermal resistance and smooth surface, whereby exfoliation can be prevented.
公开/授权文献
- US5912083A Keypad and process for producing the same 公开/授权日:1999-06-15
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