发明授权
- 专利标题： Semiconductor device with distributed bragg reflector
- 专利标题（中）： 分布式布拉格反射器的半导体器件
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申请号： US13665申请日： 1987-02-12
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公开(公告)号： US4796274A公开(公告)日： 1989-01-03
- 发明人: Shigeyuki Akiba , Masashi Usami , Yukio Noda , Masatoshi Suzuki
- 申请人： Shigeyuki Akiba , Masashi Usami , Yukio Noda , Masatoshi Suzuki
- 申请人地址： JPX Tokyo
- 专利权人： Kokusai Denshin Denwa Kabushiki Kaisha
- 当前专利权人： Kokusai Denshin Denwa Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-30986 19860217
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/12 ; H01S5/125 ; H01S3/19
摘要：
A semiconductor device with a distributed Bragg reflector is disclosed, in which periodic corrugations are formed between two semiconductor layers along the direction of travel of light. In accordance with the present invention, the periodic corrugations are formed by grid-like layers of a refractory material. The refractory material is an insulator, a refractory metal or a laminate member of an insulator and a refractory metal.