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    Semiconductor device with distributed bragg reflector
    1.
    发明授权
    Semiconductor device with distributed bragg reflector 失效
    分布式布拉格反射器的半导体器件

    公开(公告)号：US4796274A

    公开(公告)日：1989-01-03

    申请号：US13665

    申请日：1987-02-12

    申请人： Shigeyuki Akiba ,  Masashi Usami ,  Yukio Noda ,  Masatoshi Suzuki

    发明人： Shigeyuki Akiba ,  Masashi Usami ,  Yukio Noda ,  Masatoshi Suzuki

    IPC分类号： H01S5/00 ,  H01S5/12 ,  H01S5/125 ,  H01S3/19

    CPC分类号： H01S5/1228 ,  H01S5/12 ,  H01S5/125

    摘要： A semiconductor device with a distributed Bragg reflector is disclosed, in which periodic corrugations are formed between two semiconductor layers along the direction of travel of light. In accordance with the present invention, the periodic corrugations are formed by grid-like layers of a refractory material. The refractory material is an insulator, a refractory metal or a laminate member of an insulator and a refractory metal.

    摘要翻译： 公开了一种具有分布式布拉格反射器的半导体器件，其中沿着光的行进方向在两个半导体层之间形成周期性波纹。 根据本发明，周期性波纹由耐火材料的格子状的层形成。 耐火材料是绝缘体，难熔金属或绝缘体和难熔金属的层叠构件。

    Semiconductor external optical modulator
    2.
    发明授权
    Semiconductor external optical modulator 失效
    半导体外部光调制器

    公开(公告)号：US4837526A

    公开(公告)日：1989-06-06

    申请号：US42433

    申请日：1987-04-24

    申请人： Masatoshi Suzuki ,  Yukio Noda ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    发明人： Masatoshi Suzuki ,  Yukio Noda ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    IPC分类号： G02F1/015 ,  G02F1/025

    CPC分类号： G02F1/025 ,  G02F2001/0154 ,  G02F2001/0157 ,  G02F2203/25 ,  G02F2203/255

    摘要： A semiconductor external modulator is disclosed in which the mode of polarization of incident light, the crystal plane of the substrate (the direction of application of an electrical field), the energy gap of the optical waveguide layer, and the direction of travel of light are determined so that, of variations in the real and imaginary parts of the refractive index of the optical waveguide layer which are caused by the application of the electric field to the semiconductor external optical modulator, the variation in the real part of the refractive index may be reduced to substantially zero.

    摘要翻译： 公开了一种半导体外部调制器，其中入射光的偏振模式，衬底的晶面（施加电场的方向），光波导层的能隙以及光的行进方向是 确定为使得由于对半导体外部光学调制器施加电场而导致的光波导层的折射率的实部和虚部的变化，折射率的实部的变化可以是 降至基本为零。

    Method for manufacturing semiconductor optical integrated device with optical waveguide regions
    3.
    发明授权
    Method for manufacturing semiconductor optical integrated device with optical waveguide regions 失效
    具有光波导区域的半导体光集成器件的制造方法

    公开(公告)号：US4820655A

    公开(公告)日：1989-04-11

    申请号：US15953

    申请日：1987-02-18

    申请人： Yukio Noda ,  Masatoshi Suzuki ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    发明人： Yukio Noda ,  Masatoshi Suzuki ,  Yukitoshi Kushiro ,  Shigeyuki Akiba

    IPC分类号： H01L27/15 ,  G02B6/122 ,  G02F1/025 ,  H01S5/00 ,  H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205

    CPC分类号： H01S5/0265 ,  H01S5/1021 ,  H01S5/12

    摘要： A method for manufacturing a semiconductor optical integrated device in which a semiconductor element A having an optical waveguide region and a semiconductor element B having another optical waveguide region are integrated on a single substrate. In accordance with the present invention, there is provided steps of growing the optical waveguide region of the semiconductor element A and a protective layer therefor are grown on the entire area of the substrate surface, selectively removing them from the substrate surface in the region to be ultimately occupied by the semiconductor element B, and forming in the region the optical waveguide region of the semiconductor element B through crystal growth.

    摘要翻译： 一种半导体光学集成装置的制造方法，其中具有光波导区域的半导体元件A和具有另一个光波导区域的半导体元件B集成在单个基板上。 根据本发明，提供了在衬底表面的整个区域上生长半导体元件A的光波导区域和其保护层的步骤，从该区域中的衬底表面选择性地将其除去 最终由半导体元件B占据，并且通过晶体生长在该区域中形成半导体元件B的光波导区域。

    Distributed feedback semiconductor laser device and current injection
    7.
    发明授权
    Distributed feedback semiconductor laser device and current injection 失效
    分布式反馈半导体激光器件和电流注入

    公开(公告)号：US4932034A

    公开(公告)日：1990-06-05

    申请号：US414585

    申请日：1989-09-27

    申请人： Masashi Usami ,  Shigeyuki Akiba ,  Yuichi Matsushima

    发明人： Masashi Usami ,  Shigeyuki Akiba ,  Yuichi Matsushima

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/0683 ,  H01S5/12 ,  H01S5/16

    CPC分类号： H01S5/164 ,  H01S5/0625 ,  H01S5/0683 ,  H01S5/06255 ,  H01S5/06258 ,  H01S5/06832 ,  H01S5/12 ,  H01S5/124

    摘要： A distributed feedback semiconductor device is disclosed which has a diffraction grating disposed near a light emitting active layer, a double hetero structure with the active layer sandwiched between n- and p-type semiconductors and n- and p-side electrodes for injection a current into the active layer, one of the n- and p-side electrodes being divided into a plurality of electrodes, and in which a current is injected into the active layer across the n- and p-side electrodes for laser oscillation to obtain output light. A first current source is connected to each of electrodes into which one of the n- and p-side electrodes is divided, and a second current source is connected to the divided electrodes via resistors, for injecting a current into the active layer in a desired ratio. The first and second current sources are controlled in accordance with the light emitting state of the active layer. In operation, a current is injected into the active layer through the divided electrodes while controlling the injected-current density in the active layer to be uniform in the direction of travel of light until the injected current reaches a threshold current at which the distributed feedback semiconductor laser device starts to oscillate, and a current thereafter injected while controlling the injected-current density to be maximum in at least that region of the active layer in which the light intensity is maximum in the direction of travel of light.