发明授权
- 专利标题： Field effect transistor
- 专利标题（中）： 场效应晶体管
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申请号： US72180申请日： 1987-07-10
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公开(公告)号： US4799087A公开(公告)日： 1989-01-17
- 发明人: Takao Matsuyama , Hisaki Tarui , Shinya Tsuda , Shoichi Nakano , Yukinori Kuwano
- 申请人： Takao Matsuyama , Hisaki Tarui , Shinya Tsuda , Shoichi Nakano , Yukinori Kuwano
- 申请人地址： JPX Moriguchi
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JPX Moriguchi
- 优先权： JPX61-172087 19860722
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/338 ; H01L29/15 ; H01L29/16 ; H01L29/49 ; H01L29/778 ; H01L29/786 ; H01L29/812 ; H01L27/12
摘要：
A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed between the channel layer and the gate electrode, the superlattice layer having a plurality of constituent thin layers perpendicular to a direction of electric current in the channel layer.
公开/授权文献
- US6032874A Mixing apparatus for spraying a liquid mixture 公开/授权日：2000-03-07
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