发明授权
US4801441A Method for the preparation of high surface area amorphous transition
metal chalcogenides
失效
高表面积无定形过渡金属硫族化合物的制备方法
- 专利标题: Method for the preparation of high surface area amorphous transition metal chalcogenides
- 专利标题(中): 高表面积无定形过渡金属硫族化合物的制备方法
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申请号: US878069申请日: 1986-06-24
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公开(公告)号: US4801441A公开(公告)日: 1989-01-31
- 发明人: Donald Schleich
- 申请人: Donald Schleich
- 申请人地址: NY Brooklyn
- 专利权人: The Polytechnic University
- 当前专利权人: The Polytechnic University
- 当前专利权人地址: NY Brooklyn
- 主分类号: C01B19/04
- IPC分类号: C01B19/04 ; C01B17/20 ; C01B19/00 ; C01G39/06 ; H01M4/58 ; C01B17/00
摘要:
A process for the direct synthesis of high surface area amorphous chalcogenides of transition metals of Group IV, V, VI and VII elements, comprising the steps of:(1) forming a mixture of:(a) a halide of a said transition metal having the formula MY.sub.n where Y is chlorine, bromine, flurorine, or iodine, and n is 3, 4, 5 or 6, and(b) a source of chalcogen selected from compounds having the formula (R).sub.3 Si--X--Si(R).sub.3 wherein R is alkyl having from 1-4 carbon atoms and X is sulfur, selenium or tellurium,(2) reacting said mixture at a temperature of -77.degree. C. to +160.degree. C.;(3) separating the transition metal chalcogenide from the reaction mixture; and(4) washing said chalcogenide with an inert solvent to remove unreacted materials and the byproducts of the reaction.The high surface area amorphous chalcogenides prepared according to the covalent exchange process of the invention are advantageously used in primary or secondary batteries, particularly lithium cells. They are of amorphous chemical structure as shown by X-ray, Raman and infrared analysis. Their small crystal size, high surface area, and freedom from oxygen and water contamination, make them high activity, rechargeable cathodes in lithium cells.
公开/授权文献
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