发明授权
- 专利标题： Method for manufacturing photoelectric conversion devices
- 专利标题（中）： 制造光电转换装置的方法
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申请号： US7780申请日： 1987-01-28
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公开(公告)号： US4806496A公开(公告)日： 1989-02-21
- 发明人: Kunio Suzuki , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Mikio Kinka , Takeshi Fukada , Susumu Nagayama , Masayoshi Abe , Shunpei Yamazaki
- 申请人： Kunio Suzuki , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Mikio Kinka , Takeshi Fukada , Susumu Nagayama , Masayoshi Abe , Shunpei Yamazaki
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co. Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co. Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX61-17427 19860129; JPX61-17428 19860129; JPX61-17429 19860129
- 主分类号： H01L27/142
- IPC分类号： H01L27/142 ; H01L31/20 ; H01L31/18 ; H01L21/322
摘要：
Photoelectric conversion devices are manufactured at high yield by repairing the devices during the final steps of the manufacuturing process. Short current paths resulting from the formation process of semiconductor layers can be eliminated by applying a reverse voltage to the layers, which thus are heated and made insulating. After the elimination of the short current paths, the reverse current no longer passes beyond 15 mA on a reverse voltage of 8 V.
公开/授权文献
- US4277756A Amplifier circuit arrangement for aperiodic signals 公开/授权日：1981-07-07
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