发明授权
US4807008A Static memory cell using a heterostructure complementary transistor
switch
失效
静态存储单元采用异质结构互补晶体管开关
- 专利标题： Static memory cell using a heterostructure complementary transistor switch
- 专利标题（中）： 静态存储单元采用异质结构互补晶体管开关
-
申请号： US095974申请日： 1987-09-14
-
公开(公告)号： US4807008A公开(公告)日： 1989-02-21
- 发明人: Mau-Chung F. Chang , Peter M. Asbeck , Keh-Chung Wang , David L. Miller
- 申请人： Mau-Chung F. Chang , Peter M. Asbeck , Keh-Chung Wang , David L. Miller
- 申请人地址： CA El Segundo
- 专利权人： Rockwell International Corporation
- 当前专利权人： Rockwell International Corporation
- 当前专利权人地址： CA El Segundo
- 主分类号： G11C11/411
- IPC分类号： G11C11/411 ; H01L27/06 ; H01L27/102 ; H01L29/737 ; H01L29/72
摘要：
A heterostructure complementary transistor switch (HCTS) is fabricated using epitaxial layers on a substrate to form the desired P-N-P-N (or N-P-N-P) complementary structure in III-V compound semiconductor materials. Two HCTS are formed on a single substrate to form a memory cell. A collector and a base on one of the HCTs are connected to a base and a collector, respectively, on the other HCTS to form the memory cell.
公开/授权文献
- US5839450A Hair curler 公开/授权日：1998-11-24
信息查询
