发明授权
- 专利标题： Monolithic capacitor-varistor
- 专利标题（中）： 单片电容变阻器
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申请号： US173857申请日： 1988-03-28
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公开(公告)号： US4811164A公开(公告)日： 1989-03-07
- 发明人: Hung C. Ling , Man F. Yan
- 申请人： Hung C. Ling , Man F. Yan
- 申请人地址： NJ Murray Hill
- 专利权人： American Telephone and Telegraph Company, AT&T Bell Laboratories
- 当前专利权人： American Telephone and Telegraph Company, AT&T Bell Laboratories
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01G4/12
- IPC分类号： H01G4/12 ; H01C7/10 ; H01G4/40 ; C04B33/32 ; H01B1/06 ; H01G4/10
摘要：
A multilayer protective device is made by including a varistor composition (35) between a first plurality of interdigitated electrodes (30, 32) and a capacitor composition (36) between a second plurality of electrodes of the same device. The two compositions are chosen to have optimum sintering temperatures within about 10 percent of each other. Simultaneous sintering solidifies and laminates the two compositions into a single monolithic device.
公开/授权文献
- US5356306A Metal conductor element 公开/授权日：1994-10-18
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