发明授权
- 专利标题： Semiconductor laser
- 专利标题（中）： 半导体激光器
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申请号： US895843申请日： 1986-08-12
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公开(公告)号： US4811354A公开(公告)日： 1989-03-07
- 发明人: Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
- 申请人： Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX60-193740 19850904; JPX60-201545 19850913
- 主分类号： H01S5/10
- IPC分类号： H01S5/10 ; H01S5/343 ; H01S5/40 ; H01S3/19
摘要：
A phased array semiconductor laser has two or more luminous stripes. The number, width or center to center spacing of stripes is made different between the center region and neighborhood of facets of the laser so that the laser may oscillate stably in the fundamental supermode with an optical output of 100 mW or more.
公开/授权文献
- US5983826A Fluid control valve having mechanical pressure indicator 公开/授权日：1999-11-16
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