公开(公告)号：US07409113B2

公开(公告)日：2008-08-05

申请号：US11019370

申请日：2004-12-23

申请人： Seiji Sumi ,  Kazuhisa Uomi ,  Hiroyuki Kamiyama ,  Kazuhiko Naoe

发明人： Seiji Sumi ,  Kazuhisa Uomi ,  Hiroyuki Kamiyama ,  Kazuhiko Naoe

IPC分类号： G02F1/035 ,  G02F1/295 ,  G02B6/12

CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2203/21

摘要： This invention provides an optical transmitter module and an optical module using an EA modulator capable of realizing stable ACER regardless of operating temperature without using a control mechanism for maintaining temperature of the EA modulator constant. In the EA modulator, optical waveguides formed of a multi-layered film are formed on a substrate, an electrical signal is applied to the optical waveguides in a direction vertical to the substrate, and the input light absorption amount is changed to control the amount of output light. Also, a plurality of p-side electrodes electrically separated from each other for applying an electrical signal to the active layer optical waveguides are arranged on optical axes of active layer optical waveguides. The length of optical waveguides to which the electrical signal is applied is changed by controlling the number of p-side electrodes to which the electrical signal is applied in accordance with temperature.

摘要翻译： 本发明提供了一种使用EA调制器的光发射机模块和光模块，其能够在不使用用于保持EA调制器的温度恒定的控制机制的情况下，无论操作温度如何，都能实现稳定的ACER。 在EA调制器中，在基板上形成由多层膜形成的光波导，在垂直于基板的方向上向光波导施加电信号，并且改变输入光吸收量， 输出光。 此外，在有源层光波导的光轴上配置有多个彼此电隔离用于向有源层光波导施加电信号的p侧电极。 通过根据温度控制施加电信号的p侧电极的数量来改变施加电信号的光波导的长度。

公开(公告)号：US06678479B1

公开(公告)日：2004-01-13

申请号：US09516912

申请日：2000-03-01

申请人： Kazuhiko Naoe ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Minoru Fujita

发明人： Kazuhiko Naoe ,  Kazuhisa Uomi ,  Masahiro Aoki ,  Minoru Fujita

IPC分类号： H04B1006

CPC分类号： H01S5/0265 ,  H01S5/2077 ,  H01S5/2272 ,  H04B10/5051

摘要： For achieving a transmission light source having different transmission properties or characteristics, i.e., the a parameters, depending upon application thereof, in a light emission element of semiconductor EA modulator integrated type being constructed with a light emission portion for lasing with a single vertical mode and a plurality of EA modulators, wherein an absorption edge wavelength under the condition of applying no bias thereto, in the semiconductor multiple-quantum-well structure owned by the modulator which is near to an emission side of the light emission portion, is to be equal or longer than the absorption edge wavelength owned by the modulator positioned far from the emission side of the light emission portion.

摘要翻译： 为了实现具有不同透射特性或特性的传输光源，即根据其应用的参数，在半导体EA调制器集成型的发光元件中构造有用于以单个垂直模式激光的发光部分，以及 在靠近发光部的发射侧的调制器所拥有的半导体多量子阱结构中，在不施加偏压的条件下的吸收边缘波长的多个EA调制器将相等 或比由位于远离发光部分的发射侧的调制器所拥有的吸收边缘波长更长。

公开(公告)号：USRE38072E1

公开(公告)日：2003-04-08

申请号：US09924504

申请日：2001-08-09

申请人： Masahiko Kondo ,  Kazuhisa Uomi ,  Hitoshi Nakamura

发明人： Masahiko Kondo ,  Kazuhisa Uomi ,  Hitoshi Nakamura

IPC分类号： H01L2120

CPC分类号： H01L33/30 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02458 ,  H01L21/02461 ,  H01L21/02507 ,  H01L21/02538 ,  H01L21/0262 ,  H01L27/0605 ,  H01L27/1446 ,  H01L27/15 ,  H01L31/03048 ,  H01L31/107 ,  H01L31/125 ,  H01L33/007 ,  H01S5/021 ,  H01S5/32366 ,  H01S5/32375 ,  H01S5/3434 ,  Y02E10/544

摘要： A fabrication process for a semiconductor device including a plurality of semiconductor layers, the plurality of semiconductor layers including at least a nitrogen-containing alloy semiconductor AlaGabIn1-a-bNxPyAszSb1-x-y-z (0≦a≦1, 0≦b≦1, 0

摘要翻译： 一种包括多个半导体层的半导体器件的制造工艺，所述多个半导体层至少包括含氮合金半导体AlaGabIn1-a-bNxPyAszSb1-xyz（0≤a≤1,0<= b < 1，0

公开(公告)号：US5912913A

公开(公告)日：1999-06-15

申请号：US769789

申请日：1996-12-19

申请人： Masahiko Kondow ,  Kazunori Shinoda ,  Kazuhisa Uomi ,  Shinji Nishimura

发明人： Masahiko Kondow ,  Kazunori Shinoda ,  Kazuhisa Uomi ,  Shinji Nishimura

IPC分类号： H01S5/026 ,  H01S5/183 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01S5/42 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/18341 ,  H01S2301/176 ,  H01S5/0224 ,  H01S5/0261 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18358 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/32366 ,  H01S5/34306 ,  H01S5/423

摘要： Disclosed is a vertical cavity surface emitting laser providing mirrors at least one of which has a high reflectivity to be obtained with a small number of pairs each comprising a semiconductor low-refractivity layer and a semiconductor high-refractivity layer, (1) in which GaAs is used for a substrate and Al, In and P are used as main elements for making the low-refractivity layers lattice-matching the GaAs substrate; (2) in which Ga, In, N and As are used as main elements of the high-refractivity layers; (3) in which GaAs is used for a substrate, Ga, In, N and As are used as main elements for making an active layer and the mirrors lattice-match the GaAs substrate.

摘要翻译： 公开了一种垂直空腔表面发射激光器，其提供反射镜，其中至少一个反射率具有较小的反射率，每个对包含半导体低折射率层和半导体高折射率层，（1）其中GaAs 用作衬底，Al，In和P用作使低折射率层与GaAs衬底晶格匹配的主要元件; （2）其中Ga，In，N和As用作高折射率层的主要元素; （3）其中使用GaAs用于衬底，Ga，In，N和As用作制造有源层的主要元件，并且镜与GaAs衬底晶格匹配。

公开(公告)号：US5666455A

公开(公告)日：1997-09-09

申请号：US713867

申请日：1996-09-13

申请人： Masahiro Aoki ,  Tatemi Ido ,  Takayuki Tsutsui ,  Kazuhisa Uomi ,  Tomonobu Tsuchiya ,  Makoto Okai ,  Atsushi Nakamura

发明人： Masahiro Aoki ,  Tatemi Ido ,  Takayuki Tsutsui ,  Kazuhisa Uomi ,  Tomonobu Tsuchiya ,  Makoto Okai ,  Atsushi Nakamura

IPC分类号： G02B6/10 ,  G02B6/12 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/40

CPC分类号： H01S5/22 ,  G02B6/10 ,  G02B2006/12097 ,  G02B2006/12107 ,  G02B2006/12121 ,  G02B2006/12142 ,  G02B2006/12176 ,  H01S5/12 ,  H01S5/209 ,  H01S5/4025

摘要： A waveguide device includes an indium phosphide substrate, an active layer formed on the indium phosphide substrate, and a cladding layer formed on the active layer, the cladding layer having a ridge structure the side wall of which is configured into a reversed mesa form.

摘要翻译： 波导器件包括铟磷化物衬底，形成在磷化铟衬底上的有源层和形成在有源层上的覆层，所述覆层具有其侧壁被构造成反向台面形式的脊结构。

公开(公告)号：US5042049A

公开(公告)日：1991-08-20

申请号：US461253

申请日：1990-01-05

申请人： Tsukuru Ohtoshi ,  Shinji Sakano ,  Kazuhisa Uomi ,  Naoki Chinone

发明人： Tsukuru Ohtoshi ,  Shinji Sakano ,  Kazuhisa Uomi ,  Naoki Chinone

IPC分类号： G02F1/025 ,  G02B6/122 ,  G02F1/015 ,  G02F1/313 ,  H01S5/00 ,  H01S5/026 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/14 ,  H01S5/227 ,  H01S5/34

CPC分类号： B82Y20/00 ,  G02B6/122 ,  H01S5/06258 ,  H01S5/34 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/06256 ,  H01S5/1025 ,  H01S5/12 ,  H01S5/14 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3403 ,  H01S5/3404

摘要： A semiconductor optical device in which an optical waveguide (3, 11) provided on a semiconductor substrate (1) comprises a strained-layer superlattice shows an extremely small transmission loss. A semiconductor optical device with further improved characteristics is obtainable by using a stained-layer superlattice for a portion required to show a great change in refractive index, such as an optical crosspoint switch portion (10), as well as for the optical waveguide (3, 11). The strained-layer superlattice comprises a first semiconductor layer and a second semiconductor layer having a narrower band gap and a greater lattice constant as compared with the first semiconductor layer, the two layers grown periodically.

公开(公告)号：US5394491A

公开(公告)日：1995-02-28

申请号：US232403

申请日：1994-04-25

申请人： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

发明人： Hiroaki Inoue ,  Kazuhisa Uomi ,  Koji Ishida

IPC分类号： G02F1/313 ,  H01S5/50 ,  H04Q11/00 ,  G02B6/26

CPC分类号： G02F1/3138 ,  H01S5/50 ,  H04Q11/0005 ,  H04Q2011/0015 ,  H04Q2011/0041 ,  H04Q2011/0052

摘要： A semiconductor optical switch and an optical switch array for use in an optical logic circuit, photonic switching, OEIC, etc., wherein a light amplifying means is provided on a bypass waveguide that connects a plurality of optical waveguides, thereby enabling improvement of the light crosstalk and the light propagation loss. In particular, according to the arrangement of the present invention that a light amplifying means is provided in addition to the deflecting portion, no noise component is amplified and therefore the SN ratio is markedly increased.

摘要翻译： 一种用于光逻辑电路，光子切换，OEIC等的半导体光开关和光开关阵列，其中在连接多个光波导的旁路波导上设置有光放大装置，从而能够改善光 串扰和光传播损耗。 特别地，根据本发明的配置，除了偏转部分之外还提供了光放大装置，没有放大噪声分量，因此SN比显着增加。

公开(公告)号：US5073892A

公开(公告)日：1991-12-17

申请号：US534441

申请日：1990-06-07

申请人： Kazuhisa Uomi ,  Tsukuru Ohtoshi ,  Tomonobu Tsuchiya ,  Shinji Sasaki ,  Naoki Chinone

发明人： Kazuhisa Uomi ,  Tsukuru Ohtoshi ,  Tomonobu Tsuchiya ,  Shinji Sasaki ,  Naoki Chinone

IPC分类号： H01S5/062 ,  H01S5/30 ,  H01S5/34 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/06203 ,  H01S5/34 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/3434

摘要： A semiconductor laser device of the field modulation type includes a structure in which the threshold carrier density for laser oscillation is reduced so as to enable an effective action of a modulated electric field applied externally on an active region for radiating light, thereby enabling an extremely high speed modulation. A quantum structure which does not fulfill the charge neutrality condition for free-carriers or a strained super lattice structure is adopted as the structure in which the threshold carrier density is reduced.

公开(公告)号：US4881235A

公开(公告)日：1989-11-14

申请号：US41410

申请日：1987-04-23

申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura ,  Tsukuru Ohtoshi

IPC分类号： H01S5/227 ,  H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/227 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/309 ,  H01S5/3407 ,  Y10S372/704

摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.

摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。 理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。

公开(公告)号：US4835578A

公开(公告)日：1989-05-30

申请号：US139791

申请日：1987-12-30

申请人： Tsukuru Ohtoshi ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Naoki Chinone

发明人： Tsukuru Ohtoshi ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Naoki Chinone

IPC分类号： H01L27/15 ,  B82Y10/00 ,  B82Y20/00 ,  H01L21/335 ,  H01L29/06 ,  H01L29/15 ,  H01L29/205 ,  H01L29/775 ,  H01L29/80 ,  H01S5/00 ,  H01S5/34

CPC分类号： H01L33/24 ,  B82Y10/00 ,  B82Y20/00 ,  H01L29/151 ,  H01L29/205 ,  H01L29/66469 ,  H01L29/775 ,  H01L33/06 ,  H01S5/341

摘要： A semiconductor device comprises a first superlattice layer consisting of a first semiconductor layer that contains impurities and a second semiconductor layer that contains impurities at a low concentration, said first superlattice layer being formed on a semiconductor substrate; and a second superlattice layer that covers that exposed side walls of said first superlattice layer. A disordered region is formed in the vicinity of the first semiconductor layer of the second superlattice layer in order to realize quantum wires with the conventional manufacturing process. This makes it possible to easily fabricate a laser device, a light-emitting diode and a transistor having quantum wires to enhance their performance.

摘要翻译： 半导体器件包括由含有杂质的第一半导体层和含有低浓度杂质的第二半导体层构成的第一超晶格层，所述第一超晶格层形成在半导体衬底上; 以及覆盖所述第一超晶格层的暴露侧壁的第二超晶格层。 在第二超晶格层的第一半导体层附近形成无序区域，以通过常规制造工艺实现量子线。 这使得可以容易地制造激光器件，发光二极管和具有量子线的晶体管以增强它们的性能。