发明授权
- 专利标题: Charge pump circuitry having low saturation voltage and current-limited switch
- 专利标题(中): 具有低饱和电压和限流开关的电荷泵电路
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申请号: US50896申请日: 1987-05-15
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公开(公告)号: US4812961A公开(公告)日: 1989-03-14
- 发明人: Robert Essaff , Robert C. Dobkin
- 申请人: Robert Essaff , Robert C. Dobkin
- 申请人地址: CA Milpitas
- 专利权人: Linear Technology, Inc.
- 当前专利权人: Linear Technology, Inc.
- 当前专利权人地址: CA Milpitas
- 主分类号: H01L27/04
- IPC分类号: H01L27/04 ; H01L21/822 ; H01L21/8222 ; H01L27/06 ; H02M3/07 ; H02M3/18
摘要:
A charge pump circuit is integrated form utilizes a dual emitter transistor switch having low saturation voltage. The low saturation voltage for the transistor is provided by deriving a base bias voltage from the doubled voltage (2V.sub.cc) and a collector voltage from the voltage supply (V.sub.cc). Current-limiting for the transistor is provided by connecting one emitter to the base bias circuitry whereby the second emitter acts as a collector when the transistor saturates, thereby limiting the base drive and causing current-limiting.
公开/授权文献
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