发明授权
US4816422A Fabrication of large power semiconductor composite by wafer
interconnection of individual devices
失效
通过单个器件的晶片互连制造大功率半导体复合材料
- 专利标题: Fabrication of large power semiconductor composite by wafer interconnection of individual devices
- 专利标题(中): 通过单个器件的晶片互连制造大功率半导体复合材料
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申请号: US947151申请日: 1986-12-29
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公开(公告)号: US4816422A公开(公告)日: 1989-03-28
- 发明人: Alexander J. Yerman , Constantine A. Neugebauer
- 申请人: Alexander J. Yerman , Constantine A. Neugebauer
- 申请人地址: NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: NY Schenectady
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; H01L23/528 ; H01L23/538 ; H01L7/00
摘要:
A method for fabricating a composite semiconductor from a plurality of substantially identical individual semiconductor devices formed on a common semiconductor wafer includes testing the devices on the wafer to generate a positional mapping of acceptable and non-acceptable devices, dividing the wafer into a plurality of areas of arbitrary size, connecting corresponding contact pads on only the acceptable devices within a given area to each other via common conductive paths which are supported on a dielectric film covering the pads, the film having appropriately located holes filled with conductive material to electrically couple the common conductive paths and the underlying contact pads of only the acceptable devices. The devices within a given area are intercoupled in a manner to form an operational array; single or multiple arrays may be coupled together to form a composite package having common external contacts and heat sink supports.
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