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1.发明授权
公开(公告)号：US5206186A
公开(公告)日：1993-04-27
申请号：US950553
申请日：1992-09-25
IPC分类号： H01L21/603 , H01L23/482
CPC分类号： H01L24/80 , H01L23/4827 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/1301 , H01L2924/14 , H01L2924/30107
摘要： Annealed copper foil (12) is coated with chromium film (16), followed by coating with an appropriate thickness of gold film (14) and is thermocompression bonded to an aluminum metallized substrate (18) on a silicon chip (30) to provide solderable, high current contacts to the chip. The foil is formed into appropriate electrical network-contact patterns (40) and is bonded to the silicon chip only where aluminum metallization exists on the chip. Leaf (wing) portions (46) of the foil extend beyond the boundaries of the silicon chip for subsequent retroflexing over the foil to provide electrical contact at predesignated locations (49). External contacts to the foil are made by penetrating through a ceramic lid positioned directly above the foil area. Thus, direct thermocompression bonding of a principally copper foil to aluminum semiconductor pads can replace current gold detent/bump connections by securing a copper conductor to a silicon chip through an intermetallic AuAl.sub.2 link and an aluminum stratum.
摘要翻译： 退火铜箔（12）涂覆有铬膜（16），然后用适当厚度的金膜（14）涂覆，并且热压粘合到硅芯片（30）上的铝金属化基板（18）上以提供可焊接 ，高电流接触芯片。 箔形成适当的电网接触图案（40），并且仅在芯片上存在铝金属化的情况下结合到硅芯片。 箔的翼（翼）部分（46）延伸超过硅芯片的边界，用于随后在箔上的后向反射以在预先指定的位置（49）提供电接触。 通过穿过位于箔区域正上方的陶瓷盖制成与箔的外部接触。 因此，主要铜箔与铝半导体焊盘的直接热压接可以通过金属间AuAl2连接和铝层将铜导体固定在硅芯片上来取代当前的金制定位/凸点连接。
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2.发明授权Method of forming a hermetic package having a lead extending through an aperture in the package lid and packaged semiconductor chip 失效形成具有延伸穿过封装盖中的孔的引线和封装的半导体芯片的密封封装的方法
公开(公告)号：US5135890A
公开(公告)日：1992-08-04
申请号：US765286
申请日：1991-09-25
申请人： Victor A. K. Temple , Donald L. Watrous , Constantine A. Neugebauer , James F. Burgess , Homer H. Glascock, II
发明人： Victor A. K. Temple , Donald L. Watrous , Constantine A. Neugebauer , James F. Burgess , Homer H. Glascock, II
IPC分类号： H01L23/04 , H01L23/049 , H01L23/485
CPC分类号： H01L24/10 , H01L23/04 , H01L23/049 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2224/45144 , H01L2924/01004 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01025 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/1301 , H01L2924/1306 , H01L2924/14 , H01L2924/15787 , H01L2924/30107
摘要： A hermetically sealed package for a semiconductor device includes a lid through which the leads of the device extend vertically away from the chip through an aperture in the lid which is hermetically sealed by the external terminal or electrode. The package is compact, lightweight and free of magnetic materials.
摘要翻译： 用于半导体器件的密封封装包括一个盖子，该器件的引线通过该盖子通过盖子的孔垂直地远离芯片延伸，盖子上的孔被外部端子或电极气密地密封。 该包装体积小巧，重量轻，无磁性材料。
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公开(公告)号：US5100740A
公开(公告)日：1992-03-31
申请号：US777495
申请日：1991-10-15
IPC分类号： B23K35/00 , C04B37/02 , H01L21/48 , H01L23/492 , H01L23/498
CPC分类号： H01L23/49866 , B23K35/001 , C04B37/021 , C04B37/026 , H01L21/4839 , H01L21/4871 , H01L23/4922 , C04B2237/06 , C04B2237/124 , C04B2237/34 , C04B2237/343 , C04B2237/403 , C04B2237/407 , C04B2237/62 , C04B2237/72 , C04B2237/82 , C04B2237/86 , H01L2924/0002 , H01L2924/09701 , Y10T428/12535 , Y10T428/12542 , Y10T428/1259 , Y10T428/12611 , Y10T428/12826 , Y10T428/1284 , Y10T428/12903
摘要： A composite structure comprising a symmetric bimetallic laminate bonded to a separate substrate is provided by eutectic bonding the bimetallic laminate to the substrate. A variety of beneficial structures can be provided.
摘要翻译： 通过将双金属层压体共晶接合到基底上来提供包含结合到单独基底的对称双金属层压板的复合结构。 可以提供各种有益的结构。
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公开(公告)号：US4996116A
公开(公告)日：1991-02-26
申请号：US454547
申请日：1989-12-21
CPC分类号： B32B15/018 , H05K1/0306 , H05K3/38 , Y10T428/12576 , Y10T428/12611 , Y10T428/1266 , Y10T428/12833 , Y10T428/12868 , Y10T428/12875 , Y10T428/12889 , Y10T428/12903
摘要： A direct (metal-metal compound eutectic) bond process is improved by disposing a eutectic/substrate-wetting enhancement layer on the substrate prior to performing the direct bond process to bond a metal foil to the substrate. Where the metal is copper, the direct bond process is rendered more effective than prior art direct bond processes on alumina and beryllia and makes the direct bond process effective on tungsten, molybdenum and aluminum nitride, all of which were unusable with the prior art direct bond copper process. A variety of new, useful structures may be produced using this process. The eutectic/substrate-wetting enhancement layer is preferably a noble-like metal or includes a noble-like metal such as platinum, palladium and gold.
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5.发明授权
公开(公告)号：US4769744A
公开(公告)日：1988-09-06
申请号：US851275
申请日：1986-04-10
CPC分类号： H01L24/06 , H01L23/32 , H01L24/72 , H01L2224/05554 , H01L2224/48091 , H01L2224/49171 , H01L24/48 , H01L24/49 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/15173 , H01L2924/16152 , H01L2924/351
摘要： Solder layers in a semiconductor chip package, which electrically interconnect conductors used to gain electrical access to the electrodes on the semiconductor chip, are subjected to a transverse compressive force in excess of about 2 pounds per square inch. The semiconductor chip package can thereby undergo a marked increase in the number of cycles of heating and cooling before it fails due to increased thermal resistance arising from structural degradation of the solder layers.
摘要翻译： 半导体芯片封装中的用于电连接到半导体芯片上的电极的导电的导体的焊料层受到超过约2磅/平方英寸的横向压缩力。 由于由于焊料层的结构劣化引起的耐热性增加，因此半导体芯片封装在其失效之前的加热和冷却循环次数显着增加。
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公开(公告)号：US4750666A
公开(公告)日：1988-06-14
申请号：US853255
申请日：1986-04-17
IPC分类号： B23K20/00 , H01L21/00 , H01L23/485 , B23K31/02
CPC分类号： H01L24/13 , B23K20/007 , H01L24/11 , H01L2224/0401 , H01L2224/05624 , H01L2224/05644 , H01L2224/05669 , H01L2224/13099 , H01L2224/13144 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48644 , H01L2224/48669 , H01L2224/48724 , H01L2224/48744 , H01L2224/48769 , H01L2224/78301 , H01L2224/85201 , H01L2224/85205 , H01L24/45 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01024 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/14
摘要： A method for depositing gold bumps on metallized pads of semiconductor chips uses a commercially available thermocompression or thermosonic gold wire bonder. The method includes the steps of depositing a gold ball with an attached wire on the metallized pad, and removing the wire so that a gold bump remains on the pad.
摘要翻译： 用于在半导体芯片的金属化焊盘上沉积金凸块的方法使用市售的热压或热镍金线焊接机。 该方法包括以下步骤：在金属化焊盘上沉积附有金属线的金球，并且去除金属丝，使得焊盘上留下金凸块。
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公开(公告)号：US5418002A
公开(公告)日：1995-05-23
申请号：US632876
申请日：1990-12-24
IPC分类号： B32B9/00 , B32B15/04 , C04B35/581 , C04B37/02 , C04B41/00 , C04B41/80 , H05K1/03 , H05K3/02 , H05K3/38 , B05D5/12
CPC分类号： H01S5/02 , C04B37/021 , C04B37/025 , C04B41/0036 , C04B41/80 , C04B2235/6562 , C04B2235/6565 , C04B2235/6586 , C04B2235/6588 , C04B2237/06 , C04B2237/366 , C04B2237/407 , C04B2237/704 , C04B2237/708 , H05K1/0306 , H05K3/022 , H05K3/38
摘要： A process for direct bonding a copper film to an yttria-doped aluminum nitride substrate comprises treating the substrate by preoxidation at elevated temperature to create an overlying thin film of Al.sub.2 O.sub.3, followed by step cooling to a lower temperature. A copper foil of thickness between 1.0 and 4.0 microns and generally perforated or otherwise foraminous, is eutectically direct bonded to the substrate by the known direct bond copper (DBC) process. The resultant article exhibits high thermal conductivity, low permittivity and high mechanical strength. The peel strength of the copper film on the AlN substrate exceeds the peel strengths previously attainable in the industry.
摘要翻译： 用于将铜膜直接结合到掺杂氧化钇的氮化铝衬底的方法包括通过在升高的温度下预氧化来处理衬底，以产生上覆的Al 2 O 3薄膜，然后逐步冷却至较低温度。 通过已知的直接键合铜（DBC）工艺将厚度在1.0和4.0微米之间，通常穿孔或以其它方式存在的铜箔共晶地直接结合到衬底上。 所得物品具有高导热性，低介电常数和高机械强度。 AlN衬底上的铜膜的剥离强度超过了以前在工业上可获得的剥离强度。
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8.发明授权High density interconnect multi-chip modules including embedded distributed power supply elements 失效高密度互连多芯片模块，包括嵌入式分布式电源元件
公开(公告)号：US5384691A
公开(公告)日：1995-01-24
申请号：US2374
申请日：1993-01-08
申请人： Constantine A. Neugebauer, deceased , Charles S. Korman , David A. Bates , William H. Bicknell , Wolfgang Daum
发明人： Constantine A. Neugebauer, deceased , Charles S. Korman , David A. Bates , William H. Bicknell , Wolfgang Daum
IPC分类号： H01L23/50 , H01L23/538 , H05K7/02
CPC分类号： H01L24/82 , H01L23/50 , H01L23/5389 , H01L24/24 , H01L2224/24137 , H01L2224/24227 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73267 , H01L2224/82039 , H01L24/48 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15787 , H01L2924/19041 , H01L2924/19043 , H01L2924/19107 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011
摘要： By employing High Density Interconnect (HDI) multi-chip modules (MCMs) having elements of a distributed power supply embedded in the MCM itself, the functions of an MCM and a power converter are combined. The embedded power supply elements include DC-DC or AC-DC converters to convert an input voltage and input current to a relatively lower output voltage and relatively higher output current, thereby decreasing the current requirements of external power supply lines connected to the multi-chip module. The current and voltage outputs may be connected to chip power inputs through relatively short, low-impedance power distribution conductors comprising copper strips direct bonded to a ceramic substrate; alternatively, or in combination with direct bonded copper conductors, the low-impedance power distribution conductors may be situated within an HDI overcoat structure. The power supply elements may be placed within cavities formed in the substrate, or on a thinner portion of the substrate. The power supply may also provide multiple output voltages.
摘要翻译： 通过采用嵌入MCM本身的分布式电源元件的高密度互连（HDI）多芯片模块（MCI），组合MCM和功率转换器的功能。 嵌入式电源元件包括DC-DC或AC-DC转换器，用于将输入电压和输入电流转换为相对较低的输出电压和相对较高的输出电流，从而降低连接到多芯片的外部电源线的电流要求 模块。 电流和电压输出可以通过相对短的低阻抗配电导体连接到芯片功率输入，该导体包括直接结合到陶瓷衬底的铜带; 或者与直接接合的铜导体结合，低阻抗配电导体可以位于HDI外涂层结构内。 电源元件可以放置在形成在基板中的空腔中，或者放置在基板的较薄部分上。 电源还可以提供多个输出电压。
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9.发明授权
公开(公告)号：US5291066A
公开(公告)日：1994-03-01
申请号：US791690
申请日：1991-11-14
IPC分类号： H01L23/00 , H01L23/10 , H01L23/538 , H01L23/02
CPC分类号： H01L23/564 , H01L23/10 , H01L23/538 , H01L23/5383 , H01L23/5384 , H01L24/24 , H01L24/82 , H01L2224/24227 , H01L2224/82039 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041
摘要： A moisture-proof integrated circuit module includes at least one integrated circuit component in a high density interconnect (HDI) structure fabricated by applying to a substrate successive multiple ply sequences having a plurality of via holes therein. The sequences overlie the component(s) and the module substrate, and each sequence includes a dielectric film and a plurality of lands comprised of metal that extends into the vias of the sequence to provide electrical interconnections. The module includes at least one moisture barrier film to prevent penetration of moisture through the module to the circuit component(s).
摘要翻译： 一种防潮集成电路模块包括至少一个集成电路部件，该集成电路部件是通过在其中连续施加多个通孔的衬底施加到衬底上而制造的高密度互连（HDI）结构。 序列覆盖在组件和模块衬底上，并且每个序列包括介电膜和由金属组成的多个焊盘，其延伸到序列的通孔中以提供电互连。 模块包括至少一个防潮膜，以防止湿气穿过模块穿过电路部件。
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10.发明授权Hermetic package and packaged semiconductor chip having closely spaced leads extending through the package lid 失效密封包装和封装的半导体芯片具有延伸穿过封装盖的紧密间隔的引线
公开(公告)号：US5209390A
公开(公告)日：1993-05-11
申请号：US935805
申请日：1992-08-27
申请人： Victor A. K. Temple , Donald L. Watrous , Constantine A. Neugebauer , James F. Burgess , Homer H. Glascock, II
发明人： Victor A. K. Temple , Donald L. Watrous , Constantine A. Neugebauer , James F. Burgess , Homer H. Glascock, II
IPC分类号： H01L23/04 , H01L23/053 , H01L23/055 , H01L23/498
CPC分类号： H01L23/055 , H01L23/04 , H01L23/053 , H01L23/49827 , H01L2924/0002 , H01L2924/01079
摘要： A hermetic semiconductor package having a ceramic lid with the device leads extending vertically through the lid is disclosed. The leads are mechanically retained within the apertures in the lid and direct bonded to the lid to provide a hermetic seal and a substantial lead density.
摘要翻译： 公开了具有陶瓷盖的密封半导体封装，其具有垂直延伸穿过盖的器件引线。 引线被机械地保持在盖中的孔内并且直接结合到盖以提供气密密封和显着的引线密度。
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