发明授权
US4816881A A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
失效
用于AuZn欧姆接触到p型InP的TiW扩散屏障
- 专利标题： A TiW diffusion barrier for AuZn ohmic contacts to p-type InP
- 专利标题（中）： 用于AuZn欧姆接触到p型InP的TiW扩散屏障
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申请号： US208444申请日： 1988-06-17
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公开(公告)号： US4816881A公开(公告)日： 1989-03-28
- 发明人: John B. Boos , Nicolas A. Papanicolaou , Tung H. Weng
- 申请人： John B. Boos , Nicolas A. Papanicolaou , Tung H. Weng
- 申请人地址： DC Washington
- 专利权人： United State of America as represented by the Secretary of the Navy
- 当前专利权人： United State of America as represented by the Secretary of the Navy
- 当前专利权人地址： DC Washington
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L29/80
摘要：
A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an overlay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP semiconductor devices.
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