A nonvolatile semiconductor memory device includes a pulse signal generator for applying a pulse signal to a capacitor, a first diode connected at an anode to the capacitor, a charging circuit for charging the capacitor in a programming mode, a voltage limiter for preventing a potential at the output node from increasing above a predetermined level, memory cells of nonvolatile MOS transistors, a load MOS transistor connected to a high-voltage terminal, a row decoder for selecting a set of memory cells arranged in one row, column gate MOS transistors connected between respective sets of memory cells arranged in one column and the load MOS transistor, a data generator responsive to the voltage at the output node to turn on or off the load MOS transistor, and a column decoder responsive to the voltage at the output node to selectively energize the column gate MOS transistors. It further comprises a second diode connected between the cathode of the first diode and the output node, and a discharging circuit for discharging the cathode of the first diode to a reference voltage level during a time other than a programming mode.