发明授权
- 专利标题： Co-based alloy sputter target and process of manufacturing the same
- 专利标题（中）： Co基合金溅射靶及其制造方法
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申请号： US70441申请日： 1987-07-07
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公开(公告)号： US4832810A公开(公告)日： 1989-05-23
- 发明人: Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
- 申请人： Kyuzo Nakamura , Yoshifumi Ota , Taiki Yamada , Michio Ishikawa , Noriaki Tani , Yasushi Higuchi
- 申请人地址： JPX Kanagawa
- 专利权人： Nihon Shinku Gijutsu Kabushiki Kaisha
- 当前专利权人： Nihon Shinku Gijutsu Kabushiki Kaisha
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX61-158755 19860708
- 主分类号： C22F1/10
- IPC分类号： C22F1/10 ; C23C14/34
摘要：
A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.
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