公开(公告)号：US4832810A

公开(公告)日：1989-05-23

申请号：US70441

申请日：1987-07-07

申请人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Taiki Yamada ,  Michio Ishikawa ,  Noriaki Tani ,  Yasushi Higuchi

发明人： Kyuzo Nakamura ,  Yoshifumi Ota ,  Taiki Yamada ,  Michio Ishikawa ,  Noriaki Tani ,  Yasushi Higuchi

IPC分类号： C22F1/10 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C22F1/10

摘要： A Co-based alloy sputter target comprising a f.c.c. phase and a h.c.p. phase, wherein the value of th ratio of X-ray diffraction peak intensity, I.sub.fcc(200) /I.sub.hcp(101), is smaller than the value of the same ratio in a Co-based alloy obtained by cooling a Co-based alloy having a f.c.c. single phase to room temperature from the high temperature at which it is in a melted state.The target is manufactured by subjecting to cold-working treatment a Co-based alloy obtained by cooling a Co-based alloy material having a f.c.c. single phase from its melting temperature.

摘要翻译： 一种Co基合金溅射靶，其包括直角 相和h.c. 相，其中X射线衍射峰强度值Ifcc（200）/ Ihcp（101）的th值小于通过冷却具有第一相的Co基合金获得的Co基合金中相同比例的值， 一个fcc 从处于熔融状态的高温到单相至室温。 目标是通过对通过冷却具有直角角度的Co基合金材料获得的Co基合金进行冷加工处理来制造的。 单相从其熔融温度。

公开(公告)号：US5116479A

公开(公告)日：1992-05-26

申请号：US524768

申请日：1990-05-17

申请人： Kyuzo Nakamura ,  Satoru Ishibashi ,  Yoshifumi Ota ,  Yasushi Higuchi

发明人： Kyuzo Nakamura ,  Satoru Ishibashi ,  Yoshifumi Ota ,  Yasushi Higuchi

IPC分类号： C08J7/06 ,  C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01B5/14 ,  H01J37/34

CPC分类号： H01J37/3458 ,  C23C14/086 ,  C23C14/35 ,  H01J37/3405

摘要： A process and apparatus for producing an In-O or In-Sn-O based transparent conductive film by a sputtering process is provided. The sputtering voltage is kept constant at 350V or less by maintaining the intensity of the magnetic field on the surface of the target at 400 Oe or greater. The apparatus contains a vacuum chamber wherein the substrate and target are mounted in opposite to each other. An electromagnet, used for adjusting the intensity of the magnetic field is located on the rear surface of the target. Additionally provided is a controller for the electric current supplied to the electromagnet. The controller is also connected to a DC power supply for the electromagnet.

摘要翻译： 提供了一种通过溅射工艺制造In-O或In-Sn-O系透明导电膜的方法和装置。 通过将目标表面上的磁场强度保持在400Oe以上，将溅射电压保持在350V以下。 该装置包含真空室，其中基板和靶相互相对地安装。 用于调整磁场强度的电磁铁位于目标的后表面。 另外提供了用于供应到电磁体的电流的控制器。 控制器也连接到电磁铁的直流电源。

公开(公告)号：US5180476A

公开(公告)日：1993-01-19

申请号：US660840

申请日：1991-02-26

申请人： Satoru Ishibashi ,  Kyuzo Nakamura ,  Yasushi Higuchi ,  Takashi Komatsu ,  Yuzo Murata ,  Yoshifumi Ota

发明人： Satoru Ishibashi ,  Kyuzo Nakamura ,  Yasushi Higuchi ,  Takashi Komatsu ,  Yuzo Murata ,  Yoshifumi Ota

IPC分类号： C23C14/08 ,  C23C14/34 ,  C23C14/35 ,  H01L21/203 ,  H01L21/285

CPC分类号： C23C14/086 ,  C23C14/35 ,  H01L31/1884 ,  Y02E10/50

摘要： A method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film according to the present invention uses the addition of a donor element, if needed. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target at 600 Oe or greater as well as by charging the target with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O base transparent conductive film uses the addition of a donor element, if needed. The apparatus has a vacuum chamber adapted to support therein a substrate and a target in an opposed relationship for forming by sputtering the transparent conductive film on the substrate by plasma discharge generated therebetween. The apparatus has a device for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target, a DC power supply for charging the target with a DC electric field, and an RF power supply for charging the target with an RF electric field superimposed on the DC electric field.

公开(公告)号：US09216609B2

公开(公告)日：2015-12-22

申请号：US13981277

申请日：2012-02-01

申请人： Hiroaki Inoue ,  Yasushi Higuchi ,  Michio Ishikawa

发明人： Hiroaki Inoue ,  Yasushi Higuchi ,  Michio Ishikawa

IPC分类号： B44C1/22 ,  H01J37/32 ,  H01L21/311

CPC分类号： B44C1/227 ,  H01J37/32192 ,  H01L21/31116

摘要： A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and a gas introduction device through which N2 and at least one of H2 and NH3 can be introduced; a microwave applying microwaves to the interior of the pipe pathway; a gas introducer as a source of supply for F, between the vacuum chamber and the zone; and a shower plate. A method comprises introducing N2 and at least one of H2 and NH3 into a pipe pathway and applying microwaves. The gas mixture is decomposed by the plasma forming decomposition products as active species which react with F during transportation to the vacuum chamber to make radicals. An SiO2 layer on the substrate etched in the vacuum chamber, by irradiating the substrate with the radicals through the shower plate.

摘要翻译： 一种激进蚀刻装置，包括用于待处理基板的真空室; 连接到真空室的管道，用于产生等离子体的区域和气体引入装置，通过该导入装置可以引入N 2和至少一个H 2和NH 3; 将微波应用到管道通道的内部; 作为F的供气源的气体导入器，位于真空室和区域之间; 和淋浴板。 一种方法包括将N2和H2和NH3中的至少一种引入管道并施加微波。 气体混合物被等离子体形成分解产物分解为活性物质，在与真空室运输过程中与F反应形成自由基。 在真空室中蚀刻的衬底上的SiO 2层，通过淋浴板将自由基照射到衬底上。

公开(公告)号：US20130306599A1

公开(公告)日：2013-11-21

申请号：US13981277

申请日：2012-02-01

申请人： Hiroaki Inoue ,  Yasushi Higuchi ,  Michio Ishikawa

发明人： Hiroaki Inoue ,  Yasushi Higuchi ,  Michio Ishikawa

IPC分类号： B44C1/22

CPC分类号： B44C1/227 ,  H01J37/32192 ,  H01L21/31116

摘要： A radical etching apparatus comprising a vacuum chamber for a substrate to be treated; a pipe pathway, connected to the vacuum chamber, a zone for generating plasma and with a gas introduction device through which N2 and at least one of H2 and NH3 can be introduced; a microwave applying microwaves to the interior of the pipe pathway; a gas introducer as a source of supply for F, between the vacuum chamber and the zone; and a shower plate. A method comprises introducing N2 and at least one of H2 gas and NH3 into a pipe pathway and applying microwaves. The gas mixture is decomposed by the plasma forming decomposition products as active species which react with F during transportation to a the vacuum chamber to make radicals. An SiO2 layer on a the substrate etched in the vacuum chamber, by irradiating the substrate with the radicals through a the shower plate.

摘要翻译： 一种激进蚀刻装置，包括用于待处理基板的真空室; 连接到真空室的管道，用于产生等离子体的区域和具有气体引入装置的管道，N2和H2和NH3中的至少一个可以通过该导入装置引入; 将微波应用到管道通道的内部; 作为F的供气源的气体导入器，位于真空室和区域之间; 和淋浴板。 一种方法包括将N 2和至少一种H 2气和​​NH 3引入管道并施加微波。 气体混合物被等离子体形成分解产物分解为活性物质，它们在与真空室运输过程中与F反应形成自由基。 在真空室中蚀刻的基板上的SiO 2层，通过喷淋板照射基板。

公开(公告)号：US08669191B2

公开(公告)日：2014-03-11

申请号：US13445450

申请日：2012-04-12

申请人： Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Michio Ishikawa ,  Harunori Ushikawa ,  Naoki Hanada

发明人： Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Michio Ishikawa ,  Harunori Ushikawa ,  Naoki Hanada

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/18 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562

摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.

摘要翻译： 本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和​​NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

公开(公告)号：US20120264310A1

公开(公告)日：2012-10-18

申请号：US13445450

申请日：2012-04-12

申请人： Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Michio Ishikawa ,  Harunori Ushikawa ,  Naoki Hanada

发明人： Toshimitsu Uehigashi ,  Yasushi Higuchi ,  Michio Ishikawa ,  Harunori Ushikawa ,  Naoki Hanada

IPC分类号： H01L21/31

CPC分类号： C23C16/18 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562

摘要： A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), H2 gas and NH3 gas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.

摘要翻译： 本文公开了形成Ni膜的方法，其包括以下步骤：在真空室中将Si衬底的温度保持在期望的水平; 将真空室中的烷基酰胺化镍引入（在该有机金属化合物中，烷基是选自甲基，乙基，丁基和丙基的基团），H 2气和​​NH 3气 ; 然后根据CVD技术形成Ni膜，其中成膜温度设定在高于280℃且不高于350℃的水平。

公开(公告)号：US07893458B2

公开(公告)日：2011-02-22

申请号：US11892819

申请日：2007-08-28

申请人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H01L29/74 ,  H01L29/76

CPC分类号： H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7817 ,  H01L29/7821

摘要： A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.

摘要翻译： 半导体器件包括：半导体衬底; 设置在基板中的横向MOS晶体管; 设置在基板中的齐纳二极管; 以及设置在基板中的电容器。 晶体管包括漏极和栅极，并且二极管和电容器串联耦合在漏极和栅极之间。 该设备具有最小的尺寸和高切换速度。 此外，改善了开关损耗和浪涌电压两者。

公开(公告)号：US5036019A

公开(公告)日：1991-07-30

申请号：US537688

申请日：1990-06-13

申请人： Hiroyuki Yamane ,  Yasushi Higuchi

发明人： Hiroyuki Yamane ,  Yasushi Higuchi

IPC分类号： H01L29/78 ,  H01L21/266 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L21/823814 ,  H01L21/266 ,  H01L21/823828 ,  H01L27/0928

摘要： A method of producing a MIS transistor such as a MOS transistor has a P type and an N type channel transistors. P type and N type well regions are provided with the N type and the P type channel transistors, respectively. Both the P type and the N type well regions are covered with an insulating film on which gate electrodes are formed in a predetermined pattern by means of a photo-resist. This photo-resist is used as a channelling block layer when an N type impurity is implanted into the P type well region near the gate electrode so as to form an N type diffusion layer. As a result, the photo-resist prevents the N type impurity from channelling into the gate electrode so that a leak current does not occur within the P type well region of the N type channel transistor.

摘要翻译： MOS晶体管等MIS晶体管的制造方法具有P型和N型沟道晶体管。 P型和N型阱区分别设置有N型和P型沟道晶体管。 P型和N型阱区均用绝缘膜覆盖，其上通过光刻胶以预定图案形成栅电极。 当将N型杂质注入到栅极附近的P型阱区中时，该光刻胶用作沟道阻挡层，以形成N型扩散层。 结果，光刻胶防止了N型杂质向栅电极的沟通，使得在N型沟道晶体管的P型阱区内不会发生漏电流。

公开(公告)号：US4952665A

公开(公告)日：1990-08-28

申请号：US234793

申请日：1988-08-22

申请人： Shuji Ebata ,  Yasushi Higuchi

发明人： Shuji Ebata ,  Yasushi Higuchi

IPC分类号： C08G65/38 ,  C08G65/40 ,  C08L81/06

CPC分类号： C08G65/4093 ,  C08G65/38 ,  C08L81/06

摘要： An improved process for producing aromatic polyethers by condensation polymerizing aromatic dihydroxy compounds represented by the general formula: HO--Ar--OH and aromatic dichloro compounds represented by the general formula: Cl--Ar.sup.1 --Y--Ar.sup.2 --Cl, or condensation polymerizing monohydroxymonochloro aromatic compounds represented by the general formula: HO--Ar.sup.1 --Y--Ar.sup.2 --Cl (in the above formulae, Ar, Ar.sup.1, Ar.sup.2 are as defined in the specification) in the presence of alkali metal compounds comprising a combination of alkali metal carbonates comprising carbonate and/or hydrogencarbonate of an alkali metal, e.g., potassium, and alkali metal fluorides.In accordance with the present process, high molecular weight aromatic polyethers can be efficiently produced from aromatic chloro compounds which are inexpensive and easily available.