发明授权
US4833647A Semiconductor memory device having high capacitance and improved
radiation immunity
失效
半导体存储器件具有高电容和改善的辐射抗扰性
- 专利标题： Semiconductor memory device having high capacitance and improved radiation immunity
- 专利标题（中）： 半导体存储器件具有高电容和改善的辐射抗扰性
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申请号： US903997申请日： 1986-09-05
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公开(公告)号： US4833647A公开(公告)日： 1989-05-23
- 发明人: Satoshi Maeda , Shizuo Sawada
- 申请人： Satoshi Maeda , Shizuo Sawada
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX60-200026 19850910
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; G11C11/34 ; H01L21/8242 ; H01L27/108
摘要：
The semiconductor memory device of the present invention is formed on an integrated substrate and is immune to alpha radiation. The device includes a semiconductor substrate of a first conductive type and a memory cell formed in the substrate which has a switching MOS transistor having at least a first impurity region of a second conductive type and a capacitor connected to the transistor for storing memory data. A second impurity region of the first conductive type and having a higher concentration than that of the substrate is provided on the substrate surface at a position covering the first impurity region.
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