发明授权
US4833650A Semiconductor memory device including programmable mode selection
circuitry
失效
半导体存储器件包括可编程模式选择电路
- 专利标题: Semiconductor memory device including programmable mode selection circuitry
- 专利标题(中): 半导体存储器件包括可编程模式选择电路
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申请号: US34094申请日: 1987-04-02
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公开(公告)号: US4833650A公开(公告)日: 1989-05-23
- 发明人: Kazutoshi Hirayama , Hideyuki Ozaki , Kazuyasu Fujishima , Hideto Hidaka
- 申请人: Kazutoshi Hirayama , Hideyuki Ozaki , Kazuyasu Fujishima , Hideto Hidaka
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX61-146687 19860623
- 主分类号: G11C11/401
- IPC分类号: G11C11/401 ; G11C7/10 ; G11C7/22 ; G11C11/4096
摘要:
A semiconductor memory device includes a plurality of operation mode control circuits provided on a memory chip of the device for respectively executing a corresponding plurality of writing/reading operation modes including at least a static column mode, a high speed page mode and a nibble mode, and a plurality of operation mode selection circuits provided on the memory chip, each of the operation mode selection circuits having a fuse element and a bonding pad for selecting one of the plurality of the operation mode control circuits when the fuse element is cut off or the bonding pad is selectively wired, so that various functions can be selectively effected on the same chip.
公开/授权文献
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