发明授权
- 专利标题： Resist pattern forming process with dry etching
- 专利标题（中）： 干蚀刻抗蚀图案成型工艺
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申请号： US60323申请日： 1987-06-10
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公开(公告)号： US4835089A公开(公告)日： 1989-05-30
- 发明人: Takao Iwayanagi , Norio Hasegawa , Toshihiko Tanaka , Hiroshi Shiraishi , Takumi Ueno , Michiaki Hashimoto , Seiichiro Shirai , Kazuya Kadota
- 申请人： Takao Iwayanagi , Norio Hasegawa , Toshihiko Tanaka , Hiroshi Shiraishi , Takumi Ueno , Michiaki Hashimoto , Seiichiro Shirai , Kazuya Kadota
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX59-191448 19840914; JPX60-19920 19850206
- 主分类号： G03F7/095
- IPC分类号： G03F7/095
摘要：
A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.
公开/授权文献
- US6083789A Method for manufacturing DRAM capacitor 公开/授权日：2000-07-04