发明授权
- 专利标题： Vertical type MOS transistor and method of formation thereof
- 专利标题（中）： 垂直型MOS晶体管及其形成方法
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申请号： US127138申请日： 1987-12-01
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公开(公告)号： US4845537A公开(公告)日： 1989-07-04
- 发明人: Tadashi Nishimura , Kazuyuki Sugahara , Shigeru Kusunoki , Akihiko Ohsaki
- 申请人： Tadashi Nishimura , Kazuyuki Sugahara , Shigeru Kusunoki , Akihiko Ohsaki
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-287322 19861201
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L21/336 ; H01L21/8242 ; H01L27/108 ; H01L29/78
摘要：
A vertical MOS transistor having its channel length determined by the thickness of an insulating layer provided over a semiconductor substrate, rather than by the depth of a trench in which the transistor is formed. As a result, the characteristics of the transistor as relatively unaffected by doping and heat-treatment steps which are performed during formation. Also, the transistor may be formed so as to occupy very little surface area, making it suitable for application in high-density DRAMs. 0O048455372
公开/授权文献
- US5480690A Multi-layer polyamide-based packaging casing 公开/授权日：1996-01-02
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