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US4845724A Semiconductor laser device having optical guilding layers of unequal resistance 失效
半导体激光器件具有不均等阻抗的光学层

Semiconductor laser device having optical guilding layers of unequal
resistance
摘要:
A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, a striped structure in which current injected into the laser device is confined, the striped structure being constituted by a part of the double-heterostructure, and optical guiding layers positioned between one cladding layer and the active layer and between the active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.
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