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公开(公告)号：US6055255A
公开(公告)日：2000-04-25
申请号：US790815
申请日：1997-01-30
CPC分类号： H01S5/2231 , H01S5/0601 , H01S5/0658 , H01S5/2219
摘要： A semiconductor laser device includes: a semiconductor substrate of a first conductivity type; a layered structure including at least a first cladding layer of the first conductivity type, an active layer, and a second cladding layer of a second conductivity type. The layered structure is provided on the semiconductor substrate. The semiconductor laser device also includes: a current blocking structure, having a striped concave portion therein, formed on the layered structure; and a third cladding layer of the second conductivity type provided so as to cover the striped concave portion and the current blocking structure. The current blocking structure includes at least a saturable absorbing layer having a forbidden band width which is substantially equal to a forbidden band width of the active layer.
摘要翻译： 半导体激光器件包括：第一导电类型的半导体衬底; 包括至少第一导电类型的第一包层，有源层和第二导电类型的第二包层的层状结构。 层状结构设置在半导体基板上。 半导体激光装置还包括：形成在层状结构上的具有条纹凹部的电流阻挡结构; 以及第二导电类型的第三包覆层，以覆盖条纹凹部和电流阻挡结构。 电流阻挡结构至少包括具有禁带宽度的可饱和吸收层，其基本上等于有源层的禁带宽度。
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2.发明授权Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device 失效半导体激光器件以及包括半导体激光器件的化合物半导体器件的制造方法
公开(公告)号：US5255279A
公开(公告)日：1993-10-19
申请号：US698001
申请日：1991-05-09
IPC分类号： H01L21/20 , H01L21/205 , H01L31/105 , H01L31/18 , H01L33/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32325 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01L31/105 , H01L31/1844 , H01L33/0062 , H01S5/2231 , H01S2304/02 , H01S5/0421 , H01S5/209 , H01S5/3211 , Y02E10/544 , Y02P70/521 , Y10S148/095
摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purified, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.
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公开(公告)号：US5111470A
公开(公告)日：1992-05-05
申请号：US685415
申请日：1991-04-12
申请人： Hiroyuki Hosoba , Akinori Seki , Toshio Hata , Masafumi Kondou , Takahiro Suyama , Sadayoshi Matsui
发明人： Hiroyuki Hosoba , Akinori Seki , Toshio Hata , Masafumi Kondou , Takahiro Suyama , Sadayoshi Matsui
CPC分类号： H01S5/2231 , H01S5/209 , H01S5/32316
摘要： A semiconductor laser device is provided which includes a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure containing an Al.sub.x Ga.sub.1-x As (0 y) active layer for laser oscillation formed on the first cladding layer, an Al.sub.x Ga.sub.1-x As (0 y) active layer for laser oscillation, an AlGaAs (0
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公开(公告)号：US4887274A
公开(公告)日：1989-12-12
申请号：US132520
申请日：1987-12-14
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3432
摘要： A Semiconductor laser device comprising a quantum well region with a superlattice structure that functions as an active region, wherein the superlattice quantum well region is composed of alternate layers consisting of a plurality of first Al.sub.x Ga.sub.1-x As thin films and a plurality of second Al.sub.y Ga.sub.1-y As thin films (0
摘要翻译： 一种半导体激光器件，包括具有作为有源区的超晶格结构的量子阱区，其中所述超晶格量子阱区由由多个第一Al x Ga 1-x As薄膜和多个第二Al y Ga 1-y As组成的交替层组成 薄膜（0
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公开(公告)号：US4860297A
公开(公告)日：1989-08-22
申请号：US81403
申请日：1987-08-04
CPC分类号： B82Y20/00 , H01S5/34326
摘要： In a semiconductor laser device comprising In(Ga.sub.1-x Al.sub.x)P cladding layers and an active region which has one or more In(Ga.sub.1-y Al.sub.y)P (y
摘要翻译： 在包括In（Ga1-xAlx）P包覆层和具有一个或多个In（Ga1-yAly）P（y
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公开(公告)号：US4824518A
公开(公告)日：1989-04-25
申请号：US843146
申请日：1986-03-24
IPC分类号： H01L21/203 , H01L21/263 , H01L21/324 , H01L21/20
CPC分类号： H01L21/2633 , H01L21/02395 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02631 , H01L21/02661 , H01L21/3245 , Y10S148/017 , Y10S148/025 , Y10S148/169 , Y10S438/974
摘要： A method for the production of semiconductor devices comprising: subjecting a GaAs substrate with an oxidized film thereon to a degasification treatment, heating the substrate during a radiation treatment by a molecular beam within a pre-treatment chamber to remove the oxidized film from the substrate, and growing a phosphorous compound semiconductor layer on the substrate by molecular beam epitaxy within a growth chamber connected to the pre-treatment chamber.
摘要翻译： 一种制造半导体器件的方法，其特征在于，包括：对其上的氧化膜的GaAs衬底进行脱气处理，在通过预处理室内的分子束进行放射线处理期间加热衬底以从衬底去除氧化膜， 以及通过分子束外延在连接到预处理室的生长室内在衬底上生长磷化合物半导体层。
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公开(公告)号：US4806994A
公开(公告)日：1989-02-21
申请号：US73854
申请日：1987-07-14
IPC分类号： H05B41/42 , H01L29/15 , H01S5/343 , H01L27/12 , H01L29/161
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01S5/34313 , H01S5/3432
摘要： A semiconductor device having a superlattice composed of two kinds of semiconductor materials, wherein the lattice unit of said superlattice is composed of periodically laminated layers consisting of four or more kinds of thin layers which are different from each other in the combination of materials and thickness.
摘要翻译： 一种具有由两种半导体材料组成的超晶格的半导体器件，其中所述超晶格的晶格单元由在材料和厚度的组合中彼此不同的四种或更多种薄层构成的周期性层叠层构成。
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公开(公告)号：US4787089A
公开(公告)日：1988-11-22
申请号：US12702
申请日：1987-02-09
CPC分类号： B82Y20/00 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device comprising a single or a plurality of quantum well regions formed by a superlatticed structure which is composed of alternate layers consisting of thin GaAs layers and thin Al.sub.x Ga.sub.1-x As (0
摘要翻译： 一种半导体激光器件，包括由超薄结构形成的单个或多个量子阱区域，所述超晶格结构由由薄GaAs层和薄Al x Ga 1-x As（0
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公开(公告)号：US4750183A
公开(公告)日：1988-06-07
申请号：US15880
申请日：1987-02-18
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/34313 , H01S5/2004 , H01S5/22 , H01S5/3409 , H01S5/3432
摘要： An active layer for laser oscillation and optical guiding layers for guiding laser light sandwiching the active layer therebetween are included in the device. At least one of the optical guiding layers is formed by a superlattice, the optical refractive index of which is lower than that of the active layer. Further, the optical refractive index is gradually decreased in the direction from the portion of the optical guiding layer adjacent to the active layer, to the outside of the optical guiding layer.
摘要翻译： 用于激光振荡的有源层和用于引导夹在其间的有源层的激光的光导层被包括在该装置中。 至少一个光导层由超晶格形成，其光折射率低于有源层的光学折射率。 此外，光学折射率在从与有源层相邻的光导层的部分到光导层外侧的方向上逐渐减小。
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公开(公告)号：US4693207A
公开(公告)日：1987-09-15
申请号：US805517
申请日：1985-12-06
IPC分类号： H01L21/203 , C30B23/06 , H01L21/26 , C23C16/00
CPC分类号： C30B23/06
摘要： An apparatus for the growth of semiconductor crystals in which the surface of a substrate is irradiated with molecular beam containing elements by which semiconductor thin films are formed on the substrate within a molecular beam epitaxial growth chamber in a high vacuum, thereby achieving molecular beam epitaxial growth of semiconductor thin films onto the substrate, wherein said molecular beam epitaxial growth chamber comprises an optical window through which light is introduced into said growth chamber and irradiates the surface of said substrate during molecular beam epitaxial growth.
摘要翻译： 一种用于生长半导体晶体的装置，其中在高真空中在分子束外延生长室内的衬底上在衬底上分子束照射包含元素的半导体晶体的表面，由此实现分子束外延生长 其中所述分子束外延生长室包括光学窗口，通过该光学窗口将光引入所述生长室并在分子束外延生长期间照射所述衬底的表面。
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