发明授权
- 专利标题： Thermally stable low resistance contact
- 专利标题（中）： 耐热稳定的低电阻接触
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申请号： US233851申请日： 1988-08-16
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公开(公告)号： US4849802A公开(公告)日： 1989-07-18
- 发明人: Thomas N. Jackson , Masanori Murakami , William H. Price , Sandip Tiwari , Jerry M. Woodall , Steven L. Wright
- 申请人： Thomas N. Jackson , Masanori Murakami , William H. Price , Sandip Tiwari , Jerry M. Woodall , Steven L. Wright
- 申请人地址： NY Armonk
- 专利权人： IBM Corporation
- 当前专利权人： IBM Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L29/45
- IPC分类号： H01L29/45
摘要：
In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials and small amounts of indium as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto doped GaAs wafers. The contact resistance less than 1.0 ohm millimeter was obtained after annealing at 800.degree. C. and the resistance did not increase after subsequent prolonged annealing at 400.degree. C.
公开/授权文献
- US5501685A Method for securing a cranial piece in position 公开/授权日：1996-03-26
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