发明授权
- 专利标题: Ion source application device
- 专利标题(中): 离子源应用装置
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申请号: US35031申请日: 1987-04-06
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公开(公告)号: US4851668A公开(公告)日: 1989-07-25
- 发明人: Tasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Yukio Kurosawa , Yoshimi Hakamata
- 申请人: Tasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Yukio Kurosawa , Yoshimi Hakamata
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX61-77751 19860404
- 主分类号: C23C14/48
- IPC分类号: C23C14/48 ; C23F4/00 ; G21K5/04 ; H01J27/16 ; H01J27/20 ; H01J27/24 ; H01J37/08 ; H01J37/305 ; H01J37/317
摘要:
An ion source application device comprising a gas tight plasma formation chamber sustaining a plasma produced by high frequency discharge, a high frequency coil producing the high frequency discharge, and means for extracting an ion beam from the plasma thus produced, characterized in that it comprises further an electron beam generator or a laser light generator as means for obtaining electrons serving as seeds for starting the high frequency discharge.
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