发明授权
- 专利标题： Semiconductor laser device
- 专利标题（中）： 半导体激光器件
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申请号： US72125申请日： 1987-07-10
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公开(公告)号： US4852116A公开(公告)日： 1989-07-25
- 发明人: Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Toshihiko Yoshida
- 申请人： Haruhisa Takiguchi , Shinji Kaneiwa , Hiroaki Kudo , Toshihiko Yoshida
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX61-164150 19860710
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/12 ; H01S5/20 ; H01S5/32
摘要：
A semiconductor laser device comprising an active layer, a layer furnished with a diffraction grating and formed in the vicinity of said active layer, and another layer formed on said layer with the diffraction grating and having a refractive index smaller than that of said active layer but greater than that of said layer with the diffraction grating.
公开/授权文献
- US6004262A Visually-positioned electrical monitoring apparatus 公开/授权日：1999-12-21
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