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1.发明授权
公开(公告)号：US4941148A
公开(公告)日：1990-07-10
申请号：US119780
申请日：1987-11-12
CPC分类号： H01S5/20 , H01S5/12 , H01S5/2059
摘要： A semiconductor laser element of the present invention provides a double hetero junction structure having two clad layers and an active layer formed between the two clad layers. High resistance regions are formed vertically to the light propagating direction at almost the same interval as the light wavelength in at least one of the two clad layers. The high resistance regions form a periodic current blocking structure so the semiconductor laser element may oscillate in a single longitudinal mode even in a non-steady state operation.
摘要翻译： 本发明的半导体激光元件提供了具有两个包覆层和形成在两个包层之间的有源层的双异质结结构。 高电阻区域以与两个包覆层中的至少一个中的光波长几乎相同的间隔垂直于光传播方向形成。 高电阻区域形成周期性电流阻挡结构，因此即使在非稳态操作中，半导体激光元件也可以以单一纵向模式振荡。
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公开(公告)号：US4908831A
公开(公告)日：1990-03-13
申请号：US314363
申请日：1989-02-22
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operation area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
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公开(公告)号：US4862472A
公开(公告)日：1989-08-29
申请号：US143730
申请日：1988-01-14
CPC分类号： H01S5/2231 , H01S5/0421 , H01S5/2206 , H01S5/3211 , H01S5/32316 , H01S5/32391
摘要： A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, and a stripe structure that is disposed on the double-heterostructure, the stripe structure being composed of a current blocking layer with a conductive type different from that of the adjacent cladding layer, and the current blocking layer having a striped groove constituting a current path, wherein the cladding layer that contacts the current blocking layer is composed of an In.sub.1-s Ga.sub.s P.sub.1-t As.sub.t crystal material (wherein 0.51.ltoreq.s.ltoreq.1, 0.ltoreq.t.ltoreq.1 and s=2.04t-1.04).
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公开(公告)号：US4849985A
公开(公告)日：1989-07-18
申请号：US104315
申请日：1987-10-02
CPC分类号： H01S5/12 , H01S5/1082 , H01S5/4031
摘要： A distributed feedback semiconductor laser device comprising a laser oscillation region and a distributed reflector which are provided in a laminated crystal structure, and comprising facets at both the ends, wherein a light emitting face is disposed at one or both ends of the laser oscillation region, the face being parallel to the lamination direction and intersecting with the light emitting direction at an angle which is 90 degrees minus the Bresster angle.
摘要翻译： 一种分布式反馈半导体激光器件，包括激光振荡区域和分布式反射器，其设置在层叠晶体结构中，并且包括在两端的刻面，其中发光面设置在激光振荡区域的一端或两端， 该面平行于层叠方向，并以90度减去Bresster角度的角度与发光方向相交。
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公开(公告)号：US4908830A
公开(公告)日：1990-03-13
申请号：US313982
申请日：1989-02-22
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
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公开(公告)号：US4852116A
公开(公告)日：1989-07-25
申请号：US72125
申请日：1987-07-10
CPC分类号： H01S5/12 , H01S5/2004 , H01S5/321
摘要： A semiconductor laser device comprising an active layer, a layer furnished with a diffraction grating and formed in the vicinity of said active layer, and another layer formed on said layer with the diffraction grating and having a refractive index smaller than that of said active layer but greater than that of said layer with the diffraction grating.
摘要翻译： 一种半导体激光器件，包括有源层，设置有衍射光栅并形成在所述有源层附近的层，以及在所述层上形成有衍射光栅的折射率小于所述有源层的折射率的另一层，但是 大于具有衍射光栅的所述层的厚度。
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公开(公告)号：US4841534A
公开(公告)日：1989-06-20
申请号：US229212
申请日：1988-08-05
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
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公开(公告)号：US4839900A
公开(公告)日：1989-06-13
申请号：US897337
申请日：1986-08-15
CPC分类号： H01S5/24 , H01S5/227 , H01S5/0035 , H01S5/2235 , H01S5/2237 , H01S5/2275
摘要： A buried type semiconductor laser device comprising a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate, wherein said laser-oscillation operating area contains a buffer layer having the same polarity as said substrate, an active layer and a cladding layer having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of the burying layer and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate, through said substrate or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer from said cladding layer, thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.
摘要翻译： 一种埋式半导体激光器件，包括在半导体衬底上包括条纹激光振荡操作区的多层外延生长晶体，其中所述激光振荡操作区域包含具有与所述衬底相同极性的缓冲层，活性层和 具有与所述基板的极性不同的包覆层，所述激光振荡操作区域被夹在所述基板上并且具有与所述基板不同的极性不同的所述掩埋层的一部分与所述掩埋层的另一部分之间 的所述衬底，通过所述衬底或具有与所述衬底具有相同极性的杂质的扩散区域，以将所述掩埋层与所述包层电隔离，从而保持无效电流从低覆盖层流到所述掩埋层 即使当注入到所述装置中的电流增加时。
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公开(公告)号：US4805183A
公开(公告)日：1989-02-14
申请号：US140465
申请日：1988-01-04
CPC分类号： H01S5/10 , H01S5/12 , H01S5/124 , H01S5/1243
摘要： A distributed feedback semiconductor laser device with a resonator comprising a multi-layered optical waveguide that contains an optical guiding area with a periodic corrugation, the optical guiding area being composed of at least two regions, a first region I and a second region II, wherein both the periodicity of the corrugation and the depth of each concave portion of the corrugation of the first region I of the optical guiding area are the same as those of the second region II of the optical guiding area, and moreover the thickness of the first region I of the optical guiding area is the same as that of the second region II of the optical guiding area, so that the effective refractive index of the first region I in the resonator direction becomes the same as that of the second region II in the resonator direction and the Bragg wavelength is maintained at a fixed level in the the resonator direction; and there is a difference in their refractive index at the interface between the first and second regions of the optical guiding area, so that an effective optical-phase shift takes place without changing the Bragg wavelength in the resonator direction.
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公开(公告)号：US4910744A
公开(公告)日：1990-03-20
申请号：US130352
申请日：1987-12-08
CPC分类号： H01S5/227 , H01S5/0035 , H01S5/2277
摘要： A semiconductor laser device comprising a semiconductor substrate, an active layer having a refractive index greater than that of said substrate and having an energy gap smaller than that of said substrate, and a cladding layer having a conductivity type different from that of said substrate, in that order, resulting in a double-heterostructure, wherein two parallel grooves with a given distance therebetween are disposed in the double-heterostructure so as to reach said substrate and a first burying layer having the same conductivity type as said substrate, a second burying layer having a conductivity type different from that of said substrate and a third burying layer having the same conductivity type as said substrate are disposed outside of the two grooves in that order, and moreover a semiconductor layer with the flat surface having a conductivity type different from that of said substrate is disposed over the third burying layer and the area positioned between the two parallel grooves.
摘要翻译： 一种半导体激光器件，包括半导体衬底，具有比所述衬底的折射率大的折射率并且具有比所述衬底的能隙小的能隙的有源层以及具有与所述衬底的导电类型不同的导电类型的覆层， 导致双异质结构，其中在双异质结构中设置两个具有给定距离的平行凹槽，以便到达所述衬底和具有与所述衬底相同的导电类型的第一掩埋层，第二掩埋层 具有不同于所述衬底的导电类型和具有与所述衬底相同的导电类型的第三掩埋层以该顺序布置在两个沟槽的外侧，此外，具有不同于其的导电类型的平坦表面的半导体层 的所述衬底设置在所述第三掩埋层上并且位于所述两个平行的区域之间 oves。
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