Invention Grant
- Patent Title: Method for production of oxidation-resistant silicon nitride material
- Patent Title (中): 生产抗氧化氮化硅材料的方法
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Application No.: US133627Application Date: 1987-12-16
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Publication No.: US4853204APublication Date: 1989-08-01
- Inventor: Nobuyuki Azuma , Minoru Maeda , Kazuo Nakamura
- Applicant: Nobuyuki Azuma , Minoru Maeda , Kazuo Nakamura
- Applicant Address: JPX Tokyo
- Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
- Current Assignee: Agency of Industrial Science & Technology, Ministry of International Trade & Industry
- Current Assignee Address: JPX Tokyo
- Priority: JPX61-307547 19861223
- Main IPC: C04B35/584
- IPC: C04B35/584 ; C04B41/53 ; C04B41/91
Abstract:
An oxidation-resistant silicon nitride material possessing a surface layer of a phase of closely packed crystals is produced by a procedure which comprises covering the surface of a silicon nitride substrate with a layer of an alkali metal compound, firing the coated substrate at a temperature of between 800.degree. C. and 1,300.degree. C., thereby forming an alkali metal-containing vitreous coating layer on the surface of the silicon nitride substrate, and thereafter removing the coating layer.
Public/Granted literature
- US5962385A Cleaning liquid for semiconductor devices Public/Granted day:1999-10-05
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