Invention Grant
US4855249A Process for growing III-V compound semiconductors on sapphire using a
buffer layer
失效
使用缓冲层在蓝宝石上生长III-V复合半导体的工艺
- Patent Title: Process for growing III-V compound semiconductors on sapphire using a buffer layer
- Patent Title (中): 使用缓冲层在蓝宝石上生长III-V复合半导体的工艺
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Application No.: US272081Application Date: 1988-03-16
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Publication No.: US4855249APublication Date: 1989-08-08
- Inventor: Isamu Akasaki , Nobuhiko Sawaki
- Applicant: Isamu Akasaki , Nobuhiko Sawaki
- Applicant Address: JPX
- Assignee: Nagoya University
- Current Assignee: Nagoya University
- Current Assignee Address: JPX
- Priority: JPX60-256806 19851118
- Main IPC: C30B29/40
- IPC: C30B29/40 ; C30B25/02 ; C30B29/38 ; H01L21/20 ; H01L21/205 ; H01L33/16 ; H01L33/32
Abstract:
In organometallic vapor phase hetero-epitaxial processes for growing Al.sub.x Ga.sub.1-x N films on a sapphire substrate, the substrate is subjected to a preheat treatment of brief duration, such as less than 2 minutes, at relatively low temperatures in an atmosphere comprising Al-containing organometallic compound, NH.sub.3 and H.sub.2 gases, prior to the hetero epitaxial growth of Al.sub.x Ga.sub.1-x N films. Thus, single crystalline Al.sub.x Ga.sub.1-x N layers of high uniformity and high quality having smooth, flat surfaces are provided. Multi-layers grown according to the process of the invention are free from cracks and have preferable UV or blue light emission properties.
Public/Granted literature
- US5476975A Extraction of toxic organic contaminants from wood and photodegradation of toxic organic contaminants Public/Granted day:1995-12-19
Information query
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