发明授权
- 专利标题： Multilayer trench isolation process and structure
- 专利标题（中）： 多层沟槽隔离工艺及结构
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申请号： US271145申请日： 1988-11-14
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公开(公告)号： US4855804A公开(公告)日： 1989-08-08
- 发明人: Bridgette A. Bergami , Phillip H. Williams
- 申请人： Bridgette A. Bergami , Phillip H. Williams
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L21/762
摘要：
Dielectric filled isolation walls for semiconductor devices and integrated circuits of improved characteristics and ease of manufacture are formed by etching trenches in a semiconductor substrate and refilling the trenches with multiple layers of silicon oxy-nitride. Alternative oxygen rich and nitrogen rich oxy-nitride layers are used. For the narrowest trenches two layers suffice. Where trenches of different widths are present the wider trenches receive multiple layer pairs. A cap layer of oxy-nitride is added to insure filling of any trench intersections. The oxy-nitride desirably has a composition Si.sub.x O.sub.y N.sub.z where x, y, and z are in the range of 0.25-0.4, 0.27-0.6, and 0.0-0.35, respectively, for the oxygen rich material and where x, y, and z are in the range 0.35-0.43m 0.0-0.35, and 0.28-0.6, respectively, for the nitrogen rich material, expressed in atomic fraction and x+y+z=1. Both compositions of oxy-nitride are formed in the same LPCVD reactor by changing the conditions during layer deposition.
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