发明授权
US4865655A Gallium arsenide phosphide mixed crystal epitaxial wafer with a graded
buffer layer
失效
砷化镓磷化物混晶晶外延晶片具有渐变缓冲层
- 专利标题： Gallium arsenide phosphide mixed crystal epitaxial wafer with a graded buffer layer
- 专利标题（中）： 砷化镓磷化物混晶晶外延晶片具有渐变缓冲层
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申请号： US122591申请日： 1987-11-18
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公开(公告)号： US4865655A公开(公告)日： 1989-09-12
- 发明人: Hisanori Fujita , Masaaki Kanayama , Takeshi Okano
- 申请人： Hisanori Fujita , Masaaki Kanayama , Takeshi Okano
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Mitsubishi Monsanto Chemical Co., Ltd.,Mitsubishi Chemical Industries, Ltd.
- 当前专利权人： Mitsubishi Monsanto Chemical Co., Ltd.,Mitsubishi Chemical Industries, Ltd.
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX60-133554 19850619
- 主分类号： C30B29/40
- IPC分类号： C30B29/40 ; C30B25/02 ; H01L21/20 ; H01L21/205 ; H01L27/15
摘要：
An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.
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