公开(公告)号：US4968642A

公开(公告)日：1990-11-06

申请号：US383161

申请日：1989-07-20

申请人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

发明人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

IPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L27/15

CPC分类号： H01L33/30 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0262 ,  H01L27/153 ,  H01L33/0062 ,  H01L33/0066 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S438/936

摘要： An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

公开(公告)号：US4865655A

公开(公告)日：1989-09-12

申请号：US122591

申请日：1987-11-18

申请人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

发明人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

IPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L27/15

CPC分类号： H01L33/30 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0262 ,  H01L27/153 ,  H01L33/0062 ,  H01L33/0066 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S438/936

摘要： An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

摘要翻译： 用于产生GaAsP-LED阵列的外延晶片在具有变化的X的GaAs1-xPx层中包括沿着GaAs1-xPx层的厚度具有x的不连续变化的层区域。 该层区域有助于在外延晶片中形成的LED的发光的亮度的均匀性。

公开(公告)号：US4756792A

公开(公告)日：1988-07-12

申请号：US904178

申请日：1986-09-05

申请人： Hisanori Fujita ,  Masaaki Kanayama

发明人： Hisanori Fujita ,  Masaaki Kanayama

IPC分类号： H01L21/20 ,  C30B25/02 ,  C30B25/16 ,  H01L21/18 ,  H01L21/205 ,  C30B25/12 ,  C30B25/22

CPC分类号： H01L21/02546 ,  C30B25/02 ,  C30B29/42 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02658

摘要： In a GaAs epitaxial wafer including, for example, two epitaxial layers having high and low carrier concentrations, the carrier concentration of the low carrier concentration layer is liable to greatly vary, so that wafers suitable for FETs and Schottky barrier diodes operated at UHF and SHF are produced at only a low yield. This drawback is eliminated by adjusting the heating temperature of GaAs substrate to 690.degree. to 730.degree. C. during the growth of the low carrier concentration layer.

摘要翻译： 在包括例如具有高和低载流子浓度的两个外延层的GaAs外延晶片中，低载流子浓度层的载流子浓度易于大大变化，使得适用于FET的肖特基势垒二极管和肖特基势垒二极管在UHF和SHF 仅以低产量生产。 通过在低载流子浓度层的生长期间将GaAs衬底的加热温度调节至690℃至730℃来消除该缺点。