发明授权
- 专利标题: Solid state relay and method of manufacturing the same
- 专利标题(中): 固态继电器及其制造方法
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申请号: US268215申请日: 1988-11-07
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公开(公告)号: US4873202A公开(公告)日: 1989-10-10
- 发明人: Sigeo Akiyama
- 申请人: Sigeo Akiyama
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Works, Ltd.
- 当前专利权人: Matsushita Electric Works, Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX61-68112 19860324; JPX61-139911 19860616
- 主分类号: H03K17/687
- IPC分类号: H03K17/687 ; H01L27/142 ; H01L31/02 ; H01L31/167 ; H03K17/0412 ; H03K17/785
摘要:
A solid state relay includes a MOS FET receiving a photovoltaic output generated across a photovoltaic diode array responsive to a light signal from a light-emitting element, and a normally ON driving transistor connected to the MOS FET, the driving transistor being connected at control electrode to a connection point between the photovoltaic diode array and an impedance element to be biased by a voltage generated across the impedence element during generation of the photovoltaic output across the photovoltaic diode array to have a high impedance state, whereby the relay can be prevented from providing at output terminals any intermediate state between ON and OFF states even when an input current to the relay is in lower range, and a high speed relay operation is realized.
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