发明授权
- 专利标题： Dynamic random access memory having buried word lines
- 专利标题（中）： 具有掩埋字线的动态随机存取存储器
-
申请号： US155698申请日： 1988-02-16
-
公开(公告)号： US4873560A公开(公告)日： 1989-10-10
- 发明人: Hideo Sunami , Shinichiro Kimura , Toru Kaga
- 申请人： Hideo Sunami , Shinichiro Kimura , Toru Kaga
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX62-77416 19870401
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L21/8242 ; H01L27/108
摘要：
This invention relates to a very large scale dynamic random access memory, and discloses a memory cell having a reduced step on the device surface portion and being hardly affected by incident radioactive rays. In a semiconductor memory consisting of a deep hole bored in a semiconductor substrate, a capacitor formed on the sidewall portion at the lower half of the deep hole and a switching transistor formed immediately above the capacitor, at least the half of a word line constituting the gate of the switching transistor is buried in an elongated recess formed at the surface portion of the semiconductor substrate.
公开/授权文献
- US4356422A Acoustic transducer 公开/授权日：1982-10-26
信息查询
IPC分类:
