发明授权
- 专利标题： Nonvolatile semiconductor memory device
- 专利标题（中）： 非易失性半导体存储器件
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申请号： US330040申请日： 1989-03-29
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公开(公告)号： US4884241A公开(公告)日： 1989-11-28
- 发明人: Sumio Tanaka , Shigeru Atsumi , Shinji Saito
- 申请人： Sumio Tanaka , Shigeru Atsumi , Shinji Saito
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX63-78722 19880331
- 主分类号： G11C11/41
- IPC分类号： G11C11/41 ; G11C16/06 ; G11C16/28 ; G11C17/00
摘要：
A differential amplifier having input terminals connected to first and second nodes lying between the main nonvolatile memory cell section and the nonvolatile dummy cell circuit is used as a sense amplifier. The first and second nodes are pre-charged to a high potential level prior to the data readout operation. The memory cell section and the dummy cell circuit are set in the capacitively balanced condition, thereby making it possible to correctly read out data at a high speed.
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