发明授权
- 专利标题： Method for photo annealing non-single crystalline semiconductor films
- 专利标题（中）： 非单晶半导体膜的退火方法
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申请号： US320788申请日： 1989-03-09
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公开(公告)号： US4888305A公开(公告)日： 1989-12-19
- 发明人: Shunpei Yamazaki , Kunio Suzuki , Susumu Nagayama , Takashi Inujima , Masayoshi Abe , Takeshi Fukada , Mikio Kinka , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Kaoru Koyanagi
- 申请人： Shunpei Yamazaki , Kunio Suzuki , Susumu Nagayama , Takashi Inujima , Masayoshi Abe , Takeshi Fukada , Mikio Kinka , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Kaoru Koyanagi
- 申请人地址： JPX Atsugi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Atsugi
- 优先权： JPX60-170956 19850802; JPX60-186372 19850823
- 主分类号： H01L21/30
- IPC分类号： H01L21/30 ; H01L31/20
摘要：
An improved semiconductor processing is disclosed. In the manufacturing process, just formed semiconductor layer undergoes photo annealing and latent dangling bonds are let appear on the surface and gaps, then neutralizer is introduced to the ambience of the semiconductor. The semiconductor thus formed demonstrates SEL effect in place of Staebler-Wronski effect.
公开/授权文献
- US5430698A CD playing apparatus 公开/授权日：1995-07-04
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