Invention Grant
- Patent Title: Semiconductor integrated-circuit apparatus
- Patent Title (中): 半导体集成电路设备
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Application No.: US325913Application Date: 1989-03-20
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Publication No.: US4891729APublication Date: 1990-01-02
- Inventor: Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
- Applicant: Eiji Sugiyama , Mitsuaki Natsume , Toshiharu Saito
- Applicant Address: JPX Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JPX Kawasaki
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H03K19/003 ; H03K19/086 ; H03K19/177
Abstract:
A semiconductor integrated-circuit apparatus includes a electro-conductive layer formed on a substrate, a plurality of internal cells formed on the electro-conductive layer, a plurality of bonding pads arranged around the internal cells, and a plurality of bias cells which are common to the plurality of internal cells and which generate a predetermined voltage. A plurality of bias buffer circuits supply the predetermined voltage generated in the bias cells to the internal cells.
Public/Granted literature
- US5438081A Microwave-activated preparation of silicone foams, and compositions useful therein Public/Granted day:1995-08-01
Information query
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