发明授权
- 专利标题： MOSFET device
- 专利标题（中）： MOSFET器件
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申请号： US209237申请日： 1988-06-20
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公开(公告)号： US4893158A公开(公告)日： 1990-01-09
- 发明人: Teruyoshi Mihara , Yukitsugu Hirota , Yukio Hiramoto , Tsutomu Matsushita
- 申请人： Teruyoshi Mihara , Yukitsugu Hirota , Yukio Hiramoto , Tsutomu Matsushita
- 申请人地址： JPX Yokohama
- 专利权人： Nissan Motor Co., Ltd.
- 当前专利权人： Nissan Motor Co., Ltd.
- 当前专利权人地址： JPX Yokohama
- 优先权： JPX62-153479 19870622; JPX62-223018 19870908; JPX62-224063 19870909; JPX62-224064 19870909
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H01L27/06 ; H01L29/78 ; H03K17/082
摘要：
A power MOSFET is provided with a protective circuit including a monitor MOSFET whose drain is connected with the drain of the power MOSFET, a monitor resistor connected betwen the sources of the power and monitor MOSFETs, and a monitor transistor for decreasing a gate voltage of the power MOSFET when a voltage across the monitor resistor exceeds a predetermined level representing a dangerous condition of the device.
公开/授权文献
- US6159176A Sheath and support for ultrasonic elongate tip 公开/授权日：2000-12-12