发明授权
US4896197A Semiconductor memory device having trench and stacked polysilicon
storage capacitors
失效
具有沟槽和堆叠多晶硅储存电容器的半导体存储器件
- 专利标题： Semiconductor memory device having trench and stacked polysilicon storage capacitors
- 专利标题（中）： 具有沟槽和堆叠多晶硅储存电容器的半导体存储器件
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申请号： US132645申请日： 1987-12-08
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公开(公告)号： US4896197A公开(公告)日： 1990-01-23
- 发明人: Koichiro Mashiko
- 申请人： Koichiro Mashiko
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-293733 19861210
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L21/8242 ; H01L27/108
摘要：
A first impurity region is formed on the inner surface of a trench formed on the major surface of a semiconductor substrate. The trench is filled with a vertical portion of a first electric conductor having a reversed L-shaped cross section through an insulating film. A first transistor having a first impurity region serving as a source/drain region is formed on the semiconductor substrate. A second impurity region serving as a source/drain region of a second transistor is formed on the major surface of the semiconductor substrate and spaced from the trench. A second electric conductor having a reversed L-shaped cross section for connecting the vertical portion to the second impurity region is formed, and a horizontal portion of the second electric conductor is formed to be stacked on a horizontal portion of the first electric conductor with an insulating film formed therebetween.
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