发明授权
- 专利标题: Patterning method in the manufacture of miniaturized devices
- 专利标题(中): 在小型化设备制造中的图案化方法
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申请号: US132757申请日: 1987-12-14
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公开(公告)号: US4897361A公开(公告)日: 1990-01-30
- 发明人: Lloyd R. Harriott , Morton B. Panish , Henryk Temkin
- 申请人: Lloyd R. Harriott , Morton B. Panish , Henryk Temkin
- 申请人地址: NJ Murray Hill
- 专利权人: American Telephone & Telegraph Company, AT&T Bell Laboratories
- 当前专利权人: American Telephone & Telegraph Company, AT&T Bell Laboratories
- 当前专利权人地址: NJ Murray Hill
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/027 ; H01L21/263 ; H01L21/30 ; H01L21/3065 ; H01L21/308
摘要:
When high-vacuum methods are used in the manufacture of miniaturized devices such as, e.g., semiconductor integrated-circuit devices, device layers on a substrate are preferably patterned without breaking of the vacuum. Preferred patterning involves deposition of a semiconductor mask layer, generation of the pattern in the mask layer by ion deflected-beam writing, and transfer of the pattern by dry etching. When the mask layer is an epitaxial layer, further epitaxial layer deposition after patterning may proceed without removal of remaining mask layer material.
公开/授权文献
- US5406419A Airmotor powered remote adjustable mirror 公开/授权日:1995-04-11