公开(公告)号：US5482802A

公开(公告)日：1996-01-09

申请号：US157590

申请日：1993-11-24

申请人： George K. Celler ,  Lloyd R. Harriott ,  Ratnaji R. Kola

发明人： George K. Celler ,  Lloyd R. Harriott ,  Ratnaji R. Kola

IPC分类号： G03F1/74 ,  G03F9/00

CPC分类号： G03F1/74

摘要： The present invention provides a process for locally removing at least a portion of a material layer structure in which first and second materials are provided, the second material having a higher etch rate by an activated reaction gas than the first material. The second material is disposed over at least a portion of the first material. A reaction gas flows adjacent a portion of the second material to be removed. The reaction gas is chemically reactive with at least the second material to form volatile reaction products when activated by a focused particle beam, but does not spontaneously react with the second material.The portion of the second material to be removed is irradiated with a focused particle beam. Exemplary particle beams are focused ion beams and electron beams. The focused particle beam initiates a chemical reaction between the portion of the second material and the reaction gas, forming volatile reaction products which desorb from the substrate and are removed. This technique finds particular application for removal of opaque defects on tungsten absorber x-ray masks.

摘要翻译： 本发明提供了一种用于局部去除其中提供第一和第二材料的材料层结构的至少一部分的方法，所述第二材料具有比第一材料更高的通过活化反应气体的蚀刻速率。 第二材料设置在第一材料的至少一部分上。 反应气体邻近待除去的第二材料的一部分流动。 反应气体与至少第二种材料发生化学反应，以在被聚焦的粒子束激活时形成挥发性反应产物，但不会与第二种材料自发反应。 被去除的第二材料的部分被聚焦的粒子束照射。 示例性的粒子束是聚焦离子束和电子束。 聚焦的粒子束引发第二材料的部分与反应气体之间的化学反应，形成从衬底脱附并被去除的挥发性反应产物。 该技术特别适用于去除钨吸收体x射线掩模上的不透明缺陷。

公开(公告)号：US5273849A

公开(公告)日：1993-12-28

申请号：US850226

申请日：1992-03-12

申请人： Lloyd R. Harriott ,  Michael J. R. Vasile

发明人： Lloyd R. Harriott ,  Michael J. R. Vasile

IPC分类号： G03F1/74 ,  G03F9/00

CPC分类号： G03F1/74

摘要： Repair of transparent errors in masks utilized for lithographic processes in the manufacture of devices is accomplished by a particularly expedient procedure. In this procedure a metal ion beam such as a gallium ion beam is directed to the region that is to be repaired. An organic gas, including a material having an aromatic ring with an unsaturated substituent, is introduced into this region. The interaction of the gas with the ion beam produces an opaque adherent deposit. The resolution for this deposition is extremely good and is suitable for extremely fine design rules, e.g., 1 .mu.m and below.

摘要翻译： 在制造装置中用于光刻工艺的掩模中的透明错误的修复通过特别方便的程序来实现。 在该过程中，诸如镓离子束的金属离子束被引导到要修复的区域。 将包含具有不饱和取代基的芳环的材料的有机气体引入该区域。 气体与离子束的相互作用产生不透明的粘附沉积物。 该沉积的分辨率非常好，适用于非常精细的设计规则，例如1米及以下。

公开(公告)号：US4870649A

公开(公告)日：1989-09-26

申请号：US290780

申请日：1988-12-28

申请人： Andrew H. Bobeck ,  Lloyd R. Harriott ,  Robert L. Hartman ,  Daniel R. Kaplan ,  George J. Przybylek ,  William J. Tabor

发明人： Andrew H. Bobeck ,  Lloyd R. Harriott ,  Robert L. Hartman ,  Daniel R. Kaplan ,  George J. Przybylek ,  William J. Tabor

IPC分类号： H01S3/08 ,  H01S5/028 ,  H01S5/10 ,  H01S5/12

CPC分类号： H01S5/1082 ,  H01S5/028 ,  H01S2301/14 ,  H01S5/0286 ,  H01S5/12 ,  H01S5/227

摘要： A reflection filter is disposed on a solid state laser so as to preferentially reflect TE or TM modes and to suppress oscillation within the resonator of the non-reflected modes. In one embodiment, the filter includes a layer having a plurality of grooves which may be straight and parallel or curved to approximate the mode shape. In another embodiment, the filter includes a polarization sensitive film, without grooves, which either absorbs or transmits the undesired mode. Specifically described is a buried heterostructure semiconductor DFB laser with such a reflection filter formed on at least one facet thereof.

摘要翻译： 将反射滤光器设置在固态激光器上，以优先反射TE或TM模式并抑制谐振器内的无反射模式的振荡。 在一个实施例中，过滤器包括具有多个凹槽的层，其可以是直的并且平行或弯曲以近似模式形状。 在另一个实施例中，滤光器包括无凹槽的偏振敏感膜，其吸收或传输不期望的模式。 具体描述的是在其至少一个方面上形成有这种反射滤光器的掩埋异质结构半导体DFB激光器。

公开(公告)号：US5500312A

公开(公告)日：1996-03-19

申请号：US321362

申请日：1994-10-11

申请人： Lloyd R. Harriott ,  James A. Liddle ,  Cynthia A. Volkert ,  Warren K. Waskiewicz ,  David L. Windt

发明人： Lloyd R. Harriott ,  James A. Liddle ,  Cynthia A. Volkert ,  Warren K. Waskiewicz ,  David L. Windt

IPC分类号： G03F1/00 ,  G03F1/22 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/22 ,  G03F1/20

摘要： A process for controlling the stress of multilayer films formed on a substrate is disclosed. A plurality of periods, each period having at least two layers of material wherein one of the layers of material is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate. The stress in the multilayer film is controlled by selecting a thickness for the layer under compressive stress and a thickness for the layer under tensile stress that will provide a multilayer film of the desired stress. The thickness of each layer is about 0.5 nm to about 10 nm. Multilayer films with a stress of about -50 MPa to about 50 MPa are obtained using the present process. The present invention is also directed to masks with such multilayer films.

摘要翻译： 公开了一种用于控制形成在基板上的多层膜的应力的方法。 在基板中形成多个周期，每个周期具有至少两层材料，其中材料层之一处于压应力下，另一层材料处于拉伸应力下。 通过选择压缩应力下的层的厚度和拉伸应力下的层的厚度来控制多层膜中的应力，这将提供所需应力的多层膜。 每层的厚度为约0.5nm至约10nm。 使用本方法获得约-50MPa至约50MPa的应力的多层膜。 本发明还涉及具有这种多层膜的掩模。

公开(公告)号：US5106764A

公开(公告)日：1992-04-21

申请号：US444579

申请日：1989-11-30

申请人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin ,  Yuh-Lin Wang

发明人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin ,  Yuh-Lin Wang

IPC分类号： H01L21/302 ,  H01L21/20 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311

CPC分类号： H01L21/3086 ,  H01L21/02381 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02631 ,  H01L21/30621 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31144 ,  Y10S148/026 ,  Y10S148/111

摘要： Fine featured devices are produced by a series of fabrication steps including exposing selective surface regions to irradiation, e.g. to an ion beam, generally to result in removal of masking material within irradiated regions. In most instances, subsequent etching is under conditions such that bared material is preferentially removed. Etch-removal and irradiation are such that overgrown material is of device quality at least in etched regions. The inventive process is of particular value in the fabrication of integrated circuits, e.g. circuits performing electronic and/or optical functions. The inventive process is expediently used in the fabrication of structures having minimum feature size of 1 micrometer and smaller. Patterning is dependent upon masking material of a maximum thickness of 100 .ANG..

公开(公告)号：US4897361A

公开(公告)日：1990-01-30

申请号：US132757

申请日：1987-12-14

申请人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin

发明人： Lloyd R. Harriott ,  Morton B. Panish ,  Henryk Temkin

IPC分类号： H01L21/302 ,  H01L21/027 ,  H01L21/263 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/308

CPC分类号： H01L21/3086 ,  H01L21/2633 ,  H01L21/3081 ,  H01L21/3083 ,  Y10S148/051 ,  Y10S148/072 ,  Y10S148/084 ,  Y10S148/106 ,  Y10S148/149

摘要： When high-vacuum methods are used in the manufacture of miniaturized devices such as, e.g., semiconductor integrated-circuit devices, device layers on a substrate are preferably patterned without breaking of the vacuum. Preferred patterning involves deposition of a semiconductor mask layer, generation of the pattern in the mask layer by ion deflected-beam writing, and transfer of the pattern by dry etching. When the mask layer is an epitaxial layer, further epitaxial layer deposition after patterning may proceed without removal of remaining mask layer material.