发明授权
- 专利标题: Process for producing monosilane
- 专利标题(中): 生产甲硅烷的方法
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申请号: US337657申请日: 1989-04-13
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公开(公告)号: US4904460A公开(公告)日: 1990-02-27
- 发明人: Keisuke Wada , Junzo Haji , Ichiro Yokotake
- 申请人: Keisuke Wada , Junzo Haji , Ichiro Yokotake
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Kasei Corporation
- 当前专利权人: Mitsubishi Kasei Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-91141 19880413; JPX63-91142 19880413; JPX63-324472 19881222
- 主分类号: C01B33/04
- IPC分类号: C01B33/04 ; C07F7/04
摘要:
A process for producing monosilane, which comprises disproportionating an alkoxysilane of the formula:H.sub.n Si(OR).sub.4-n (I)wherein R is an alkyl group having from 1 to 6 carbon atoms or a cycloalkyl group and n is an integer of 1, 2 or 3, in the presence of a catalyst, wherein the catalyst comprises at least one compound selected from the group consisting of aromatic alkoxides of the formula:MOAr (II)wherein M is a metal of Group Ia of the Periodic Table and Ar is a substituted or unsubstituted aromatic hydrocarbon group, and quaternary ammonium and phosphonium compounds of the formula:R.sup.1 R.sup.2 R.sup.3 R.sup.4 ZX (III)wherein each of R.sup.1, R.sup.2, R.sup.3 and R.sup.4 which may be the same or different, is a substituted or unsubstituted alkyl or aryl group, Z is a nitrogen atom or a phosphorus atom and X is an anion.
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