-
公开(公告)号:US12030781B2
公开(公告)日:2024-07-09
申请号:US17598377
申请日:2020-03-30
申请人: The Coretec Group
IPC分类号: C01B33/04
CPC分类号: C01B33/04
摘要: A method includes producing a substituted cyclosilane by combining in a solvent the following: (i) halogenated cyclosilane, (ii) at least one of tri-alkyl or tri-aryl silane, and (iii) a complexing agent that includes at least one of ammonium halide or phosphonium halide. The halogenated cyclosilane reacts to produce the substituted cyclosilane.
-
公开(公告)号:US20230416907A1
公开(公告)日:2023-12-28
申请号:US18037365
申请日:2020-11-30
申请人: WACKER CHEMIE AG
IPC分类号: C23C16/24 , C23C16/442 , C23C16/04 , C23C16/44 , C23C16/455 , H01M4/36 , H01M4/38 , H01M4/587 , C01B33/02 , C01B33/04
CPC分类号: C23C16/24 , C23C16/442 , C23C16/045 , C23C16/4417 , C23C16/45523 , H01M4/366 , H01M4/386 , H01M4/587 , C01B33/02 , C01B33/043 , H01M2004/027
摘要: Silicon-containing materials along with process for producing and uses for the same. The process includes reacting the silicon-containing materials in a fluidized bed reactor by deposition of silicon from at least one silicon precursor in pores and on the surface of porous particles. A fluidizing gas stream is provided within the fluidized bed reactor that is fully or partly induced to oscillate in a pulsed manner and propagates in the form of a wave and acts on the fluidized bed so as to form a homogeneously fluidized bed as a pulsed gas stream so as to form a homogeneously fluidized bed having a fluidization index FI of at least 0.95. Where the fluidizing gas stream has a superficial velocity which is above a measured minimum fluidization velocity of the pulsed gas stream and where the pulsation is combined with mechanical stirring as a further fluidizing aid.
-
公开(公告)号:US11377359B2
公开(公告)日:2022-07-05
申请号:US16827186
申请日:2020-03-23
申请人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人: Grigory Nikiforov , Guillaume Husson , Gennadiy Itov , Yang Wang
IPC分类号: C01B33/04 , C08G77/60 , B01J31/14 , B01J23/04 , B01J23/02 , B01J31/02 , B01J31/12 , B01J27/128 , C09D183/16 , C08G77/12
摘要: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.
-
公开(公告)号:US11097953B2
公开(公告)日:2021-08-24
申请号:US16158117
申请日:2018-10-11
申请人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人: Grigory Nikiforov , Guillaume Husson , Gennadiy Itov , Yang Wang
摘要: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.
-
公开(公告)号:US11091649B2
公开(公告)日:2021-08-17
申请号:US15809431
申请日:2017-11-10
发明人: Xiaobing Zhou
IPC分类号: C09D1/00 , C01B33/04 , C23C16/24 , H01L21/02 , C23C16/50 , B05D1/02 , C23C16/34 , H01L21/3205 , C07F7/08
摘要: A compound that is 2,2,4,4-tetrasilylpentasilane, chemical compositions comprising same, methods of making and purifying 2,2,4,4-tetrasilylpentasilane, the purified 2,2,4,4-tetrasilylpentasilane prepared thereby, and methods of forming silicon-containing materials using 2,2,4,4-tetrasilylpentasilane as a precursor.
-
公开(公告)号:US20210087708A1
公开(公告)日:2021-03-25
申请号:US17115238
申请日:2020-12-08
申请人: SILCOTEK CORP.
发明人: Min YUAN
摘要: Nano-wire growth processes, nano-wires, and articles having nano-wires are disclosed. The nano-wire growth process includes trapping growth-inducing particles on a substrate, positioning the substrate within a chamber, closing the chamber, applying a vacuum to the chamber, introducing a precursor gas to the chamber, and thermally decomposing the precursor gas. The thermally decomposing of the precursor gas grows nano-wires from the growth-inducing particles. The nano-wires and the articles having the nano-wires are produced by the nano-wire growth process.
-
公开(公告)号:US10752507B2
公开(公告)日:2020-08-25
申请号:US16158089
申请日:2018-10-11
申请人: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
发明人: Grigory Nikiforov , Guillaume Husson , Gennadiy Itov , Yang Wang
摘要: Synthesis of silanes with more than three silicon atoms are disclosed (i.e., (SinH(2n+2) with n=4-100). More particularly, the disclosed synthesis methods tune and optimize the isomer ratio by selection of process parameters such as temperature, residence time, and the relative amount of starting compounds, as well as selection of proper catalyst. The disclosed synthesis methods allow facile preparation of silanes containing more than three silicon atoms and particularly, the silanes containing preferably one major isomer. The pure isomers and isomer enriched mixtures are prepared by catalytic transformation of silane (SiH4), disilane (Si2H6), trisilane (Si3H8), and mixtures thereof.
-
公开(公告)号:US10730754B2
公开(公告)日:2020-08-04
申请号:US16618196
申请日:2018-05-23
摘要: Triphenylgermylsilane (Ph3Ge—SiH3) is useful for the production of germanium-silicon layers (Ge—Si) or as transfer agent of silane groups (SiH3). Further, a method describes the production of triphenylgermylsilane (Ph3Ge—SiH3) by reducing trichlorosilyl-triphenylgermane (Ph3Ge—SiCl3) with a hydride in solution, and another method describes the production of trichlorosilytrichlorogermane (Cl3Ge—SiCl3) by reacting trichlorosilyltriphenyigermane (Ph3Ge—SiCl3) with hydrogen chloride (HCl) in the presence of AlCl3 in solution. In addition, trichlorosilyltrichlorogermane is also used for the production of germanium-silicon layers (Ge—Si).
-
公开(公告)号:US20170313591A1
公开(公告)日:2017-11-02
申请号:US15523913
申请日:2015-10-27
发明人: Yuichi GOTO , Masahisa ENDO , Gun SON
IPC分类号: C01B33/04 , C07C211/55 , B01D3/34 , C07C211/54 , C09K15/18 , C07C211/58
CPC分类号: C01B33/046 , B01D3/34 , C01B33/04 , C07C211/54 , C07C211/55 , C07C211/58 , C08G77/60 , C09K15/18
摘要: A polymerization inhibitor for a silane enables purification of the silane to a high degree because a polymer is not formed even when heating to distill the silane, even when a cyclic silane monomer is present. A high-purity cyclic silane composition is obtained, in particular high-purity cyclopentasilane, that can be polymerized and applied onto a substrate as a coating-type polysilane composition and fired to produce a good silicon thin film with high conductivity. The polymerization inhibitor includes a secondary or tertiary aromatic amine. The aromatic group is a phenyl group or a naphthyl group. The polymerization inhibitor is present in a proportion of 0.01 to 10 mol % per mole of the silane. In the polymerization inhibitor, a boiling point of the aromatic amine is 196° C. or higher.
-
公开(公告)号:US09738532B2
公开(公告)日:2017-08-22
申请号:US14782247
申请日:2014-02-28
CPC分类号: C01B33/04 , B01J12/00 , B01J19/088 , B01J19/2475 , B01J2219/00164 , B01J2219/0875 , B01J2219/0896 , B01J2219/24 , C01B33/046 , C07F7/02
摘要: The invention relates to a process for preparing dimeric and/or trimeric silanes by conversion of monosilane in a plasma and to a plant for performance of the process.
-
-
-
-
-
-
-
-
-