发明授权
US4908656A Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision 失效
由曝光装置形成的图案的尺寸测量方法以及设置曝光条件和检查曝光精度的方法

  • 专利标题: Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
  • 专利标题(中): 由曝光装置形成的图案的尺寸测量方法以及设置曝光条件和检查曝光精度的方法
  • 申请号: US299236
    申请日: 1989-01-19
  • 公开(公告)号: US4908656A
    公开(公告)日: 1990-03-13
  • 发明人: Kyoichi SuwaShigeru HirukawaHiroki Tateno
  • 申请人: Kyoichi SuwaShigeru HirukawaHiroki Tateno
  • 申请人地址: JPX Tokyo
  • 专利权人: Nikon Corporation
  • 当前专利权人: Nikon Corporation
  • 当前专利权人地址: JPX Tokyo
  • 优先权: JPX63-11729 19880121; JPX63-180654 19880720; JPX63-180655 19880720
  • 主分类号: G03F7/20
  • IPC分类号: G03F7/20 G03F7/207
Method of dimension measurement for a pattern formed by exposure
apparatus, and method for setting exposure conditions and for
inspecting exposure precision
摘要:
An exposure method for use in an apparatus for projecting a pattern formed on a mask onto a photosensitive substrate through a projection optical system, comprises the steps of providing a mask bearing a pattern of which width gradually varies in a reference direction on the mask transferring the pattern onto the photosensitive substrate through the projection optical system measuring the length of pattern transferred onto the photosensitive substrate, in a reference direction on the substrate corresponding to the reference direction of the mask determining optimum exposure conditions for the projection exposure, from thus measured length of the pattern and controlling the exposure according to the conditions.
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