发明授权
- 专利标题： Junction field-effect transistors formed on insulator substrates
- 专利标题（中）： 形成在绝缘体基板上的结型场效应晶体管
-
申请号： US374621申请日： 1989-06-29
-
公开(公告)号： US4914491A公开(公告)日： 1990-04-03
- 发明人: Duy-Phach Vu
- 申请人： Duy-Phach Vu
- 申请人地址： MA Taunton
- 专利权人： Kopin Corporation
- 当前专利权人： Kopin Corporation
- 当前专利权人地址： MA Taunton
- 主分类号： H01L21/337
- IPC分类号： H01L21/337 ; H01L29/808
摘要：
A junction field effect transistor formed on insulator substrates particularly oxide substrates and having a polysilicon vertical control gate region formed of a cross member and two end members orthogonal thereto. The vertical control gate is formed over an n-channel in a Si island, the n-channel is located beneath the cross member, with p.sup.+ junction gate regions laterally disposed on either side of the n-channel and n.sup.+ drain and gate regions laterally orthogonal thereto in Si island.
公开/授权文献
- US5595291A Container for articles 公开/授权日：1997-01-21
信息查询
IPC分类:
