发明授权
US4916195A Poly(N-acylethyleneimine) grafted polysiloxane and its preparation
失效
聚（N-乙酰亚氨基亚胺）接枝聚硅氧烷及其制备方法
- 专利标题： Poly(N-acylethyleneimine) grafted polysiloxane and its preparation
- 专利标题（中）： 聚（N-乙酰亚氨基亚胺）接枝聚硅氧烷及其制备方法
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申请号： US199265申请日： 1988-05-09
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公开(公告)号： US4916195A公开(公告)日： 1990-04-10
- 发明人: Akihiro Kanakura , Yoshio Eguchi , Ryuzo Mizuguchi , Mitsuhiro Takarada , Yoshio Okamura , Hideyuki Itoh
- 申请人： Akihiro Kanakura , Yoshio Eguchi , Ryuzo Mizuguchi , Mitsuhiro Takarada , Yoshio Okamura , Hideyuki Itoh
- 专利权人： Akihiro Kanakura,Yoshio Eguchi,Ryuzo Mizuguchi,Mitsuhiro Takarada,Yoshio Okamura,Hideyuki Itoh
- 当前专利权人： Akihiro Kanakura,Yoshio Eguchi,Ryuzo Mizuguchi,Mitsuhiro Takarada,Yoshio Okamura,Hideyuki Itoh
- 优先权： JPX62-112938 19870508
- 主分类号： C08G77/06
- IPC分类号： C08G77/06 ; C08G77/28 ; C08G77/38 ; C08G77/388 ; C08G77/42
摘要：
The invention concerns a novel process for the preparation of poly(N-acylethyleneimine) grafted polysiloxanes comprising sulfo-esterifying all or part of alcoholic hydroxyl groups of a hydroxy containing polysiloxane and conducting, in said sulfo-esterification reaction mixture, ring-opening polymerization of a 2-oxazoline compound. The present process can afford the desired poly(N-acylethyleneimine) grafted polysiloxane in a higher reaction yield.
公开/授权文献
- US6080639A Semiconductor device containing P-HDP interdielectric layer 公开/授权日：2000-06-27