发明授权
- 专利标题: Data storage method using state transformable materials
- 专利标题(中): 数据存储方法采用状态转换材料
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申请号: US175835申请日: 1988-03-31
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公开(公告)号: US4916688A公开(公告)日: 1990-04-10
- 发明人: John S. Foster , Kurt A. Rubin , Daniel Rugar
- 申请人: John S. Foster , Kurt A. Rubin , Daniel Rugar
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: G01Q60/00
- IPC分类号: G01Q60/00 ; G11B9/00 ; G11B9/14
摘要:
A unique method for recording, reading and erasing data bits in a data storage device is described. Using extended scanning tunneling microscopy (STM) techniques, a tunneling electron current by resistive heating selectively melts discrete areas of a state-transformable film; then heat is dissipated rapidly, writing data bits by changing the film in said areas from a first state to a second state wherein an electronic property, such as conductance, work function or band gap, in said areas is changed.Again, using extended STM techniques, the effect of this changed electronic property of said film on the tunneling current is measured for reading the written data bits. Minimizing the effect of blemishes on the material is effected, during operation in STM constant current mode by measuring dI/dV or dI/ds, and during operation in STM variable current (constant gap) mode by measuring (dI/dV)/I or (dI/ds)/I.Also by using extended STM techniques, data bits can be selectively erased by resistance heating the film to a temperature higher than the crystallization temperature for a sufficient period of time, restoring selected discrete areas to said first state and each affected electronic property substantially to its original condition.
公开/授权文献
- US5457786A Serial data interface with circular buffer 公开/授权日:1995-10-10
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