摘要:
A method of actuating a plurality of probes. Each probe may be made of two or more materials with different thermal expansion coefficients which are arranged such that when the probe is illuminated by an actuation beam it deforms to move the probe relative to a sample. Energy is delivered to the probes by sequentially illuminating them with an actuation beam via an objective lens in a series of scan sequences. Two or more of the probes are illuminated by the actuation beam in each scan sequence and the actuation beam enters the objective lens at a different angle to an optical axis of the objective lens for each probe which is illuminated in a scan sequence. The actuation beam is controlled so that different amounts of energy are delivered to at least two of the probes by the actuation beam during at least one of the scan sequences.
摘要:
A memory device includes an upper conductive layer, a lower layer, and a resistive, optical or magnetic matrix positioned between the upper and lower layers.
摘要:
According to an embodiment, a microprobe includes a base and a lever. The base includes a first electrode provided on a surface thereof. The lever is supported by the base and includes a second electrode and a third electrode. The second electrode is connected between the first electrode and the third electrode. The third electrode is formed to project from the second electrode in a first direction in a main surface of the lever. A width of the third electrode in a second direction perpendicular to the first direction in the main surface defines a width of an electrical contact area when a scanning operation is performed by use of the third electrode in a third direction perpendicular to the main surface.
摘要:
A local probe storage array is provided that includes a substrate, and a polymeric layer over the substrate, the polymeric layer comprising a crosslinking agent that has been cured, the crosslinking agent comprising at least three alkyne groups.
摘要:
An approach is presented for designing a polymeric layer for nanometer scale thermo-mechanical storage devices. Cross-linked polyimide oligomers are used as the recording layers in atomic force data storage device, giving significantly improved performance when compared to previously reported cross-linked and linear polymers. The cross-linking of the polyimide oligomers may be tuned to match thermal and force parameters required in read-write-erase cycles. Additionally, the cross-linked polyimide oligomers are suitable for use in nano-scale imaging.
摘要:
According to embodiments of the present invention, a probe storage medium includes a conductive layer as an electrode and a metal, metalloid, and/or non-metal doped diamond-like carbon (DLC) layer disposed on the conductive layer. A probe array may be positioned close proximity with the layer of doped DLC. An individual probe in the probe array may have an atomic force microscope tip. The probe storage medium may be written to by applying a current, voltage, and/or power to the tip between a thresholds current, voltage, and/or power value and a limiting current, voltage, and/or power value. The current, voltage, and/or power cause the layer of DLC to change conductance. The probe storage medium may be read by applying a current, voltage, and/or power to the tip below a threshold current, voltage, and/or power value and sensing the conductance.
摘要:
An apparatus for detecting a probe position error includes a position error extracting unit extracting probe position errors from signals detected by a probe; a position error adding unit calculating the probe position errors in units of a predetermined time; and a signal processing unit storing a past probe position error calculated by the position error extracting unit and generating a probe position error by processing the past probe position error and a current probe position error. An apparatus for tracking data includes a scanner moving a data storage medium; a probe detecting the signals from a data storage medium; an error detector detecting probe position errors in a half-period of an error extracting signal by applying the error extracting signal used to extract the probe position errors to the signal detected by the probe; and a compensator compensating for the probe position errors detected by the error detector.
摘要:
The record condition extraction system (1) of a dielectric recording medium is intended to obtain an applied voltage and an applied time length to be recorded when recording information in the dielectric recording medium. The record condition extraction system (1) is provided with: an applied voltage setting device (11); an applied time length setting device (12); a record control device (13); an applied voltage/applied time length record device (14); a record device (15); a dot radius measurement device (16); a dot radius record device (17); an optimum dot radius detection device (18); a record condition determination device (19); and an output device (20). The applied voltage setting device (11) and the applied time length setting device (12) set a voltage and a time applied to a probe (31) of the record device (15), respectively. The dot radius of a polarization domain 38, which is recorded at the record device (15), is measured at the dot radius measurement device (16), and the optimum polarization domain (38) is obtained at the optimum dot radius detection device (18). The applied voltage and the applied time length which have formed the polarization domain (38) are extracted as an optimum record condition.
摘要:
An information storage medium in which charges and electric dipoles are coupled with one another. The information storage medium includes a substrate, an electrode layer formed on the substrate, a ferroelectric layer formed on the electrode layer, and an insulating layer formed on the ferroelectric layer. Accordingly, it is possible to stably record information on the information storage medium.
摘要:
An information storage device having a hard disk has a metal probe that is brought closely to the surface of a multilayer film that includes a magnetic metal layer, a non-magnetic metal layer, and a magnetic metal layer up to a nano-meter order distance from the surface. The distance between the metal probe and the surface of the multilayer film, as well as the voltage to be applied are changed to change the state of the quantum well generated in the multilayer film, thereby changing the magnetizing direction relatively between the two magnetic metal layers. To read magnetization information from the hard disk, a change of an optically induced tunnel current is used. The change of the tunnel current is caused by a change of a plasmon resonance energy according to a relative change of the magnetizing direction between the magnetic metal layers.